DICP OpenIR
Oxygen adsorption on Ag/Si(111)-7x7 surfaces
Zhang, Zhen1; Jiao, Jian1; Jiang, Zhiquan1; Tan, Dali1; Fu, Qiang1; Bao, Xinhe1; Liu, Xi2; Jia, Jinfeng2; Xue, Qikun2; Bao XH(包信和)
Source PublicationJOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
2008
DOI10.1116/1.2816938
Volume26Issue:1Pages:62-67
Indexed BySCI
SubtypeArticle
Department5
Funding Project502
Contribution Rank1;1
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectMaterials Science, Coatings & Films ; Physics, Applied
WOS Research AreaMaterials Science ; Physics
WOS KeywordENERGY-LOSS SPECTROSCOPY ; AUGER-ELECTRON-SPECTROSCOPY ; STAGE OXIDATION-PRODUCTS ; SI(111)7X7 SURFACE ; ROOM-TEMPERATURE ; INITIAL-STAGES ; SI(111)-(7X7) OXIDATION ; ULTRATHIN FILMS ; MODEL CATALYSTS ; AG
AbstractThe growth of Ag clusters on Si(111)-7 x 7 surfaces was studied by scanning tunneling microscopy (STM), ultraviolet photoelectron spectroscopy, and x-ray photoelectron spectroscopy (XPS). A shift in the Ag 3d binding energy and a noticeable change in the valence-band structure reveal a significant modification of the electronic states of the Si(111)-7 X 7 surface and the dispersed Ag clusters, which had a strong dependence on the coverage of Ag. Furthermore, these Ag clusters deposited on the Si surface alter the behavior of oxygen adsorption on the Si(111)-7 X 7 surface. As evidenced by XPS, the presence of Ag inhibits the adsorbed surface oxygen species, the ins-ins and ad-ins oxygen, in which "ad" denotes an O atom bonding on top of the Si adatom and "ins" denotes an O atom inserted into a Si adatom back bond. The STM and high-resolution electron energy loss spectroscopy results show that the ins-ins oxygen species are more significantly suppressed by the Ag clusters compared to the ad-ins oxygen. (C) 2008 American Vacuum Society.
Language英语
URL查看原文
WOS IDWOS:000252982100010
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/100583
Collection中国科学院大连化学物理研究所
Corresponding AuthorBao XH(包信和)
Affiliation1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
2.Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Zhen,Jiao, Jian,Jiang, Zhiquan,et al. Oxygen adsorption on Ag/Si(111)-7x7 surfaces[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2008,26(1):62-67.
APA Zhang, Zhen.,Jiao, Jian.,Jiang, Zhiquan.,Tan, Dali.,Fu, Qiang.,...&包信和.(2008).Oxygen adsorption on Ag/Si(111)-7x7 surfaces.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,26(1),62-67.
MLA Zhang, Zhen,et al."Oxygen adsorption on Ag/Si(111)-7x7 surfaces".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 26.1(2008):62-67.
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