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Modulation of surface reactivity via electron confinement in metal quantum well films: O2 adsorption on Pb/Si(111)
Zhang Z(张镇); Yanfeng Zhang; Fu Q(傅强); Zhang H(张辉); Yao YX(姚运喜); Ma T(马腾); Tan DL(谭大力); Qikun Xue; Bao XH(包信和); Zhang Z(张镇); Yanfeng Zhang; Fu Q(傅强); Zhang H(张辉); Yao YX(姚运喜); Ma T(马腾); Tan DL(谭大力); Qikun Xue; Bao XH(包信和)
Source PublicationJournal of Chemical Physics
2008
Volume129Pages:14704-14710
Department5
Funding Project502
Contribution Rank1;1
Language
URL查看原文
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/100635
Collection中国科学院大连化学物理研究所
Corresponding AuthorBao XH(包信和); Bao XH(包信和)
Recommended Citation
GB/T 7714
Zhang Z,Yanfeng Zhang,Fu Q,et al. Modulation of surface reactivity via electron confinement in metal quantum well films: O2 adsorption on Pb/Si(111)[J]. Journal of Chemical Physics,2008,129:14704-14710.
APA 张镇.,Yanfeng Zhang.,傅强.,张辉.,姚运喜.,...&包信和.(2008).Modulation of surface reactivity via electron confinement in metal quantum well films: O2 adsorption on Pb/Si(111).Journal of Chemical Physics,129,14704-14710.
MLA 张镇,et al."Modulation of surface reactivity via electron confinement in metal quantum well films: O2 adsorption on Pb/Si(111)".Journal of Chemical Physics 129(2008):14704-14710.
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