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题名: Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation
作者: Lu, R. F.1, 2;  Lu, Y. P.2;  Lee, S. Y.2;  Han, K. L.1;  Deng, W. Q.1, 2
通讯作者: 邓伟侨
刊名: NANOTECHNOLOGY
发表日期: 2009-12-16
DOI: 10.1088/0957-4484/20/50/505401
卷: 20, 期:50, 页:505401-505401
收录类别: SCI
文章类型: Article
部门归属: 11
项目归属: 1101
产权排名: 1;1
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary ;  Physics, Applied
研究领域[WOS]: Science & Technology - Other Topics ;  Materials Science ;  Physics
英文摘要: We use time-dependent quantum wavepacket methods to simulate ballistic electron transport in a single-walled carbon nanotube field-effect transistor at terahertz frequencies (similar to 100 GHz-10 THz). We observe an electron resonance phenomenon in a sub-picosecond-scale time domain. Our simulation results clearly show that the electron resonance corresponds to the formation of the resonance cavity and the interference of the electron wavepackets, which is directly supported by recent experimental measurements (Zhong et al 2008 Nat. Nanotechnol. 3 201).
关键词[WOS]: ELECTRONICS ;  SCATTERING ;  TRANSPORT
语种: 英语
原文出处: 查看原文
WOS记录号: WOS:000272166200008
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/102935
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
2.Nanyang Technol Univ, Div Chem & Biol Chem, Sch Phys & Math Sci, Singapore 639798, Singapore

Recommended Citation:
Lu, R. F.,Lu, Y. P.,Lee, S. Y.,et al. Terahertz response in single-walled carbon nanotube transistor: a real-time quantum dynamics simulation[J]. NANOTECHNOLOGY,2009,20(50):505401-505401.
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