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学科主题: 物理化学
题名: Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition
作者: Cheng SM(程士敏) ;  Ren T(任通) ;  Feng ZC(冯兆池) ;  Ying PL(应品良) ;  Li C(李灿)
会议名称: 第十三届亚洲化学会
会议日期: 2009-9-13
出版日期: 2009-09-13
会议地点: China
通讯作者: 李灿
部门归属: 五室
主办者: Chinese Chemical Society
摘要: Silicon films have been prepared by catalytic chemical vapor deposition (Cat-CVD), which is often called hot-wire CVD. Raman spectroscopy is very important to study silicon films. We have quantified the crystallinity of the silicon films using the intensity ratio Xc=I~520cm-1/(I~480cm-1+I~520cm-1) by deconvoluting the transverse optical (TO) phonon peak into a sharp peak around 520cm-1 and a broad band at 480cm-1 due to crystalline and amorphous phase, respectively. Effect of the temperature of substrate (Ts), distance between the filament and substrate (Lfs) and the pressure of deposition process (P) on the silicon films have been investigated from the Raman spectra, respectively (Fig.1). When increase the Ts, decrease the Lfs, or increase the P, silicon films with higher crystallinity can be obtained controllably. The changes of the deposition parameters produce different gas-phase precursors for the films and the surface dynamics has been adjusted during the film growth.
语种: 中文
内容类型: 会议论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/113826
Appears in Collections:中国科学院大连化学物理研究所_会议论文

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Recommended Citation:
Cheng SM,Ren T,Feng ZC,et al. Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition[C]. 见:第十三届亚洲化学会. China. 2009-9-13.
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