DICP OpenIR
学科主题物理化学
Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition
Cheng SM(程士敏); Ren T(任通); Feng ZC(冯兆池); Ying PL(应品良); Li C(李灿)
会议名称第十三届亚洲化学会
会议日期2009-9-13
2009-09-13
会议地点China
页码129/1
部门归属五室
主办者Chinese Chemical Society
英文摘要Silicon films have been prepared by catalytic chemical vapor deposition (Cat-CVD), which is often called hot-wire CVD. Raman spectroscopy is very important to study silicon films. We have quantified the crystallinity of the silicon films using the intensity ratio Xc=I~520cm-1/(I~480cm-1+I~520cm-1) by deconvoluting the transverse optical (TO) phonon peak into a sharp peak around 520cm-1 and a broad band at 480cm-1 due to crystalline and amorphous phase, respectively. Effect of the temperature of substrate (Ts), distance between the filament and substrate (Lfs) and the pressure of deposition process (P) on the silicon films have been investigated from the Raman spectra, respectively (Fig.1). When increase the Ts, decrease the Lfs, or increase the P, silicon films with higher crystallinity can be obtained controllably. The changes of the deposition parameters produce different gas-phase precursors for the films and the surface dynamics has been adjusted during the film growth.
语种中文
文献类型会议论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/113826
专题中国科学院大连化学物理研究所
通讯作者Li C(李灿)
推荐引用方式
GB/T 7714
Cheng SM,Ren T,Feng ZC,et al. Raman Spectroscopic Study on Silicon Films Prepared by Catalytic Chemical Vapor Deposition[C],2009:129/1.
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