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学科主题: 物理化学
题名: Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces
作者: Wang, Zhen1;  Fu, Qiang1;  Xu, Xuejun1;  Zhang, Hongbo1;  Li, Wenliang2, 3;  Gao, Min2, 3;  Tan, Dali1;  Bao, Xinhe1
通讯作者: 傅强 ;  包信和
刊名: CHEMICAL PHYSICS LETTERS
发表日期: 2011-02-17
DOI: 10.1016/j.cplett.2010.12.086
卷: 503, 期:4-6, 页:247-251
收录类别: SCI
文章类型: Article
部门归属: 5
项目归属: 502
产权排名: 1,1
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Physical ;  Physics, Atomic, Molecular & Chemical
摘要: Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces
研究领域[WOS]: Chemistry ;  Physics
英文摘要: The growth of metal-free carbon nanotube (CNT) arrays on SiC surface was investigated systematically by using high temperature annealing of 6H-SiC(0 0 0 (1) over bar) crystals under various atmospheres, including inert, hydrogen-containing, and oxygen-containing gaseous environments. Carbon nanowall structure consisting of graphene sheets standing vertically on the substrate forms under the inert and hydrogen-containing atmospheres, while vertically aligned CNT arrays can be obtained in oxygen-containing atmospheres, such as H(2)O. The comparative studies reveal that oxygen-containing species play a critical role in the formation of CNTs on SiC. Transient SiO nanoclusters formed at the C/SiC interface are proposed to be the active sites for CNT growth on SiC. (C) 2010 Elsevier B.V. All rights reserved.
关键词[WOS]: WALLED CARBON NANOTUBES ;  CATALYST-FREE GROWTH ;  SILICON-CARBIDE ;  OXYGEN REDUCTION ;  GRAPHENE ;  DECOMPOSITION ;  GRAPHITE
语种: 英语
WOS记录号: WOS:000287187800013
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/115483
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
2.Peking Univ, Dept Elect, Beijing 100871, Peoples R China
3.Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

Recommended Citation:
Wang, Zhen,Fu, Qiang,Xu, Xuejun,et al. Controlled growth of metal-free vertically aligned CNT arrays on SiC surfaces[J]. CHEMICAL PHYSICS LETTERS,2011,503(4-6):247-251.
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