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学科主题物理化学
Growth mechanism of metal-free vertically aligned CNT arrays on SiC surfaces
Wang Z(王珍); Fu Q(傅强); Xu XJ(许学俊); Zhang HB(张洪波); Li WL(李文亮); Gao M(高敏); Tan DL(谭大力); Bao XH(包信和)
会议文集Proceedings of Carbocat IV
会议名称4th International Symposium on Carbon for Catalysis
会议日期2010-11-7
2011
会议地点大连
页码113-0
出版者待补充
出版地待补充
合作性质墙报
部门归属502
主办者大连化物所
英文摘要The growth mechanism of metal-free carbon nanotube (CNT) arrays on SiC surface was investigated systematically using high temperature annealing of 6H-SiC(000-1) crystals under various atmospheres, including inert, hydrogen-containing, and oxygen-containing environments. Carbon nanowall structure forms under the inert and hydrogen-containing atmospheres, while vertically aligned CNT arrays can be obtained in oxygen-containing atmospheres, such as H2O. The comparative studies reveal that oxygen-containing species play a critical role in the formation of CNTs on SiC. The transient SiO clusters formed at the C/SiC interface are proposed to be the active sites for CNT growth on SiC.; The growth mechanism of metal-free carbon nanotube (CNT) arrays on SiC surface was investigated systematically using high temperature annealing of 6H-SiC(000-1) crystals under various atmospheres, including inert, hydrogen-containing, and oxygen-containing environments. Carbon nanowall structure forms under the inert and hydrogen-containing atmospheres, while vertically aligned CNT arrays can be obtained in oxygen-containing atmospheres, such as H2O. The comparative studies reveal that oxygen-containing species play a critical role in the formation of CNTs on SiC. The transient SiO clusters formed at the C/SiC interface are proposed to be the active sites for CNT growth on SiC.
文献类型会议论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/115903
专题中国科学院大连化学物理研究所
通讯作者Fu Q(傅强); Bao XH(包信和)
推荐引用方式
GB/T 7714
Wang Z,Fu Q,Xu XJ,et al. Growth mechanism of metal-free vertically aligned CNT arrays on SiC surfaces[C]. 待补充:待补充,2011:113-0.
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