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学科主题: 物理化学
题名: Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
作者: Wang, Meihan1;  Lei, Hao2;  Seki, Yoshiyuki3;  Seki, Shigeyuki4;  Sawada, Yutaka3;  Hoshi, Yoichi3;  Wang, Shaohong1;  Sun, Lixian5
通讯作者: Wang ;  M.H.
关键词: Partly crystallized amorphous IO film ;  Water vapor ;  Thermal crystallization kinetic ;  Electrical properties
刊名: JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
发表日期: 2013-02-01
DOI: 10.1007/s10973-012-2526-9
卷: 111, 期:2, 页:1457-1461
收录类别: SCI
合作性质: 
文章类型: Article
部门归属: DNL19
项目归属: DNL1903
产权排名: 待补充
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Analytical ;  Chemistry, Physical
资助者: 5,8
研究领域[WOS]: Chemistry
英文摘要: Partly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 x 10(-5) Torr water vapor pressure was determined to be 30.7 kJ mol(-1), which is higher than 18.9 kJ mol(-1) for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.
关键词[WOS]: TIN-OXIDE ;  MICROSTRUCTURES
语种: 英语
原文出处: 查看原文
WOS记录号: WOS:000313409700058
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/119211
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Shenyang Univ, Ctr Sci Res, Shenyang 110044, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Dept Surface Engn Mat, Shenyang 110016, Peoples R China
3.Tokyo Polytech Univ, Ctr Hyper Media Res, Atsugi, Kanagawa 2430297, Japan
4.Sendai Natl Coll Technol, Dept Elect Engn, Aoba Ku, Sendai, Miyagi 9893128, Japan
5.Chinese Acad Sci, Dalian Inst Chem Phys, Mat & Thermochem Lab, Dalian 116023, Peoples R China

Recommended Citation:
Wang, Meihan,Lei, Hao,Seki, Yoshiyuki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,2013,111(2):1457-1461.
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