DICP OpenIR
Subject Area物理化学
Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
Wang, Meihan1; Lei, Hao2; Seki, Yoshiyuki3; Seki, Shigeyuki4; Sawada, Yutaka3; Hoshi, Yoichi3; Wang, Shaohong1; Sun, Lixian5; Wang; M.H.
KeywordPartly Crystallized Amorphous Io Film Water Vapor Thermal Crystallization Kinetic Electrical Properties
Source PublicationJOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
2013-02-01
DOI10.1007/s10973-012-2526-9
Volume111Issue:2Pages:1457-1461
Indexed BySCI
Cooperation Status
SubtypeArticle
DepartmentDNL19
Funding ProjectDNL1903
Contribution Rank待补充
WOS HeadingsScience & Technology ; Physical Sciences
Funding Organization5,8 ; 5,8 ; 5,8 ; 5,8
WOS SubjectChemistry, Analytical ; Chemistry, Physical
WOS Research AreaChemistry
WOS KeywordTIN-OXIDE ; MICROSTRUCTURES
AbstractPartly crystallized amorphous indium oxide thin films were deposited under water vapor atmosphere by magnetron sputtering. XRD analysis revealed that appropriate water vapor could suppress the film's crystallinity. In situ thermal crystallization process was monitored by high-temperature XRD. The crystallization data were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation. The kinetic exponent n is determined to be approx. 1/2 and 3/2 for film deposited in the absence and the presence of water vapor, respectively. The activation energy of crystallization for film deposited under 1 x 10(-5) Torr water vapor pressure was determined to be 30.7 kJ mol(-1), which is higher than 18.9 kJ mol(-1) for film deposited in the absence of water vapor. The increased activation energy caused by the chemically bonded hydrogen and embedded O-H bonds from the water vapor resulted in the suppression of crystallization. Introduction of appropriate water vapor during the deposition decreased the resistivity because of the increase of Hall mobility. The resistivity of the films after annealing increased due to the evaporation of water vapor resulted in crystal defects.
Language英语
Funding Organization5,8 ; 5,8 ; 5,8 ; 5,8
URL查看原文
WOS IDWOS:000313409700058
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/119211
Collection中国科学院大连化学物理研究所
Corresponding AuthorWang; M.H.
Affiliation1.Shenyang Univ, Ctr Sci Res, Shenyang 110044, Peoples R China
2.Chinese Acad Sci, Inst Met Res, Dept Surface Engn Mat, Shenyang 110016, Peoples R China
3.Tokyo Polytech Univ, Ctr Hyper Media Res, Atsugi, Kanagawa 2430297, Japan
4.Sendai Natl Coll Technol, Dept Elect Engn, Aoba Ku, Sendai, Miyagi 9893128, Japan
5.Chinese Acad Sci, Dalian Inst Chem Phys, Mat & Thermochem Lab, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Wang, Meihan,Lei, Hao,Seki, Yoshiyuki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,2013,111(2):1457-1461.
APA Wang, Meihan.,Lei, Hao.,Seki, Yoshiyuki.,Seki, Shigeyuki.,Sawada, Yutaka.,...&M.H..(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,111(2),1457-1461.
MLA Wang, Meihan,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY 111.2(2013):1457-1461.
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