DICP OpenIR
学科主题物理化学
Band-Gap States of TiO2(110): Major Contribution from Surface Defects
Mao, Xinchun1; Lang, Xiufeng2; Wang, Zhiqiang1; Hao, Qunqing1; Wen, Bo2,3; Ren, Zefeng3; Dai, Dongxu1; Zhou, Chuanyao1; Liu, Li-Min2; Yang, Xueming1; Zhou CY(周传耀); Liu LM(刘利民); Yang XM(杨学明)
刊名JOURNAL OF PHYSICAL CHEMISTRY LETTERS
2013-11-21
DOI10.1021/jz402053p
4期:22页:3839-3844
收录类别SCI
合作性质
文章类型Article
部门归属11
项目归属1102
产权排名待补充
WOS标题词Science & Technology ; Physical Sciences ; Technology
资助者1,1 ; 1,1 ; 1,1 ; 1,1
类目[WOS]Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]SEMICONDUCTOR PHOTOCATALYSIS ; REDUCED TIO2(110) ; OXYGEN VACANCIES ; OH GROUPS ; WATER ; TIO2 ; O-2 ; DISSOCIATION ; OXIDATION ; DYNAMICS
英文摘要Many physical and chemical processes on TiO2 surface are linked to the excess electrons originated from band gap states. However, the sources (surface and/or subsurface defects) of these states are controversial. We present quantitative ultraviolet photoelectron spectroscopy (UPS) measurements on the band gap states of TiO2(110) with constant subsurface defect density and varied surface bridging hydroxyls (ObrH) prepared through photocatalyzed splitting of methanol, in combination with density functional theory (DFT) calculations. Our results clearly suggest both surface and subsurface defects contribute to the band gap states, whereas the contribution of subsurface defects corresponds to that of only 1.9% monolayer ObrH at the current bulk reduction level. As the surface defect concentration is usually much larger than 1.9% monolayer in real studies and applications, our work demonstrates the importance of surface defects in changing the electronic structure of TiO2, which dictates the surface chemistry.
语种英语
资助者1,1 ; 1,1 ; 1,1 ; 1,1
原文出处查看原文
WOS记录号WOS:000327557600005
引用统计
被引频次:39[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/119339
专题中国科学院大连化学物理研究所
通讯作者Zhou CY(周传耀); Liu LM(刘利民); Yang XM(杨学明)
作者单位1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Liaoning, Peoples R China
2.Beijing Computat Sci Res Ctr, Beijing 100084, Peoples R China
3.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714
Mao, Xinchun,Lang, Xiufeng,Wang, Zhiqiang,et al. Band-Gap States of TiO2(110): Major Contribution from Surface Defects[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2013,4(22):3839-3844.
APA Mao, Xinchun.,Lang, Xiufeng.,Wang, Zhiqiang.,Hao, Qunqing.,Wen, Bo.,...&杨学明.(2013).Band-Gap States of TiO2(110): Major Contribution from Surface Defects.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,4(22),3839-3844.
MLA Mao, Xinchun,et al."Band-Gap States of TiO2(110): Major Contribution from Surface Defects".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 4.22(2013):3839-3844.
条目包含的文件
文件名称/大小 文献类型 版本类型 开放类型 使用许可
2013itwGj0CWPW.PDF(1229KB) 开放获取CC BY-NC-SA请求全文
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[Mao, Xinchun]的文章
[Lang, Xiufeng]的文章
[Wang, Zhiqiang]的文章
百度学术
百度学术中相似的文章
[Mao, Xinchun]的文章
[Lang, Xiufeng]的文章
[Wang, Zhiqiang]的文章
必应学术
必应学术中相似的文章
[Mao, Xinchun]的文章
[Lang, Xiufeng]的文章
[Wang, Zhiqiang]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。