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学科主题物理化学
A 3N rule for the electronic properties of doped graphene
Zhou, Ye-Cheng1; Zhang, Hao-Li1; Deng, Wei-Qiao2; Hao-Li Zhang
刊名NANOTECHNOLOGY
2013-06-07
ISSN0957-4484
DOI10.1088/0957-4484/24/22/225705
24期:22页:225705
收录类别SCI
合作性质
文章类型Article
部门归属11
项目归属11T4
产权排名待补充
WOS标题词Science & Technology ; Technology ; Physical Sciences
资助者2,3 ; 2,3 ; 2,3 ; 2,3
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]NANORIBBONS
英文摘要Doping a graphene sheet with different atoms is a promising method for tuning its electronic properties. We report a first-principle investigation on the electronic properties of N, B, S, Al, Si or P doped graphene. It is revealed that the doped graphene can show an interesting physical regularity, which can be described by a simple 3N rule: a doped graphene has a zero gap or a neglectable gap at the Dirac point when its primitive cell is 3N x 3N (N is an integer), otherwise there is a gap tunable by the dopant concentration. This unique 3N rule provides a useful guideline for the design of doped graphene for electronic applications.
语种英语
资助者2,3 ; 2,3 ; 2,3 ; 2,3
原文出处查看原文
WOS记录号WOS:000319326600021
引用统计
被引频次:29[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/119439
专题中国科学院大连化学物理研究所
通讯作者Hao-Li Zhang
作者单位1.Lanzhou Univ, Coll Chem & Chem Engn, State Key Lab Appl Organ Chem SKLAOC, Lanzhou 730000, Gansu, Peoples R China
2.Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
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GB/T 7714
Zhou, Ye-Cheng,Zhang, Hao-Li,Deng, Wei-Qiao,et al. A 3N rule for the electronic properties of doped graphene[J]. NANOTECHNOLOGY,2013,24(22):225705.
APA Zhou, Ye-Cheng,Zhang, Hao-Li,Deng, Wei-Qiao,&Hao-Li Zhang.(2013).A 3N rule for the electronic properties of doped graphene.NANOTECHNOLOGY,24(22),225705.
MLA Zhou, Ye-Cheng,et al."A 3N rule for the electronic properties of doped graphene".NANOTECHNOLOGY 24.22(2013):225705.
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