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学科主题: 物理化学
题名: A 3N rule for the electronic properties of doped graphene
作者: Zhou, Ye-Cheng1;  Zhang, Hao-Li1;  Deng, Wei-Qiao2
通讯作者: Hao-Li Zhang
刊名: NANOTECHNOLOGY
发表日期: 2013-06-07
DOI: 10.1088/0957-4484/24/22/225705
卷: 24, 期:22, 页:225705
收录类别: SCI
合作性质: 
文章类型: Article
部门归属: 11
项目归属: 11T4
产权排名: 待补充
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary ;  Physics, Applied
资助者: 2,3
研究领域[WOS]: Science & Technology - Other Topics ;  Materials Science ;  Physics
英文摘要: Doping a graphene sheet with different atoms is a promising method for tuning its electronic properties. We report a first-principle investigation on the electronic properties of N, B, S, Al, Si or P doped graphene. It is revealed that the doped graphene can show an interesting physical regularity, which can be described by a simple 3N rule: a doped graphene has a zero gap or a neglectable gap at the Dirac point when its primitive cell is 3N x 3N (N is an integer), otherwise there is a gap tunable by the dopant concentration. This unique 3N rule provides a useful guideline for the design of doped graphene for electronic applications.
关键词[WOS]: NANORIBBONS
语种: 英语
原文出处: 查看原文
WOS记录号: WOS:000319326600021
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/119439
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Lanzhou Univ, Coll Chem & Chem Engn, State Key Lab Appl Organ Chem SKLAOC, Lanzhou 730000, Gansu, Peoples R China
2.Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China

Recommended Citation:
Zhou, Ye-Cheng,Zhang, Hao-Li,Deng, Wei-Qiao. A 3N rule for the electronic properties of doped graphene[J]. NANOTECHNOLOGY,2013,24(22):225705.
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