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一种双电离的离子源; 一种双电离的离子源; 一种双电离的离子源; 一种双电离的离子源
唐紫超;  史磊;  李刚;  王兴龙;  吴小虎;  张世宇
Application NumberCN201310617392.1
Patent NumberCN201310617392.1
Application Date2013-11-27
2014
Patent Agent张晨
Rights Holder中国科学院大连化学物理研究所
Subtype发明
PCT Attributes
CountryCN
Department大连化物所
一种双电离的离子源; 一种双电离的离子源; 一种双电离的离子源; 一种双电离的离子源
Date Available2014-02-19
Status实审
Abstract一种双电离的离子源,该离子源由电子轰击电离(EI源)和真空紫外灯电离(PI源)两种电离方式组成,其结构包括进样管,推斥极、电离室、灯丝、紫外灯、引出极、聚焦极、出射极、推斥板和接地栅板。本发明拓宽了单一离子源分析多形态样品时的适用性,同时提高了碎片离子的质量选择,可有效的分析离子组成和样品结构。
Language中文
Document Type专利
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/120659
Collection中国科学院大连化学物理研究所
Recommended Citation
GB/T 7714
唐紫超, 史磊, 李刚,等. 一种双电离的离子源, 一种双电离的离子源, 一种双电离的离子源, 一种双电离的离子源. CN201310617392.1[P]. 2014-01-01.
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