DICP OpenIR
Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study
Zhang, Min1; Liu, Lei2; Yang, Xiaoxu1; Xu, Feifei1; Liu, Chengsen1; Gong, Faquan3; Li, Mengke1
KeywordPulsed Bias Arc Ion Plating Pulsed Plasma Titanium Dioxide Films Sheath Dynamics
Source PublicationSURFACE & COATINGS TECHNOLOGY
2013-08-25
DOI10.1016/j.surfcoat.2012.05.083
Volume229Pages:186-190
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectMaterials Science, Coatings & Films ; Physics, Applied
WOS Research AreaMaterials Science ; Physics
AbstractDielectric TiO2 thin films were fabricated on p-(100) Si substrates by arc ion plating (Alp). The effects of pulsed negative bias on phase structure and growth of TiO2 films were investigated by applying a pulsed bias ranging from 0 V to -900 V on the substrates. Phase, microstructure, and growth morphology of TiO2 films prepared at different bias voltages were evaluated with GIXRD and AFM. The results show that pulsed bias exerts an obvious influence on phase structure and growth morphology. High substrate bias facilitates the formation of rutile phase and a (220) preferred orientation is observed in TiO2 films obtained at -900 V. AFM images show that pulsed substrate bias exerts a strong influence on the growth of TiO2 films. As for the TiO2 films obtained at 0 V, surface islands are tiny, the density of islands is high and RMS roughness is about 1.1 nm. While for the TiO2 films at -900 V, surface islands are large, the island density is relative low and RMS roughness is around 3.8 nm, three times larger than the case of 0 V. To explain the phenomena observed in this study, pulsed plasma sheath model was used to simulate the ion sheath dynamics. The time evolutions within a pulsed period of the potential distribution and ion density distribution in the sheath were evaluated. By analyzing experimental and simulated results, it can be concluded that film growth and property relate close to ion density and energy in the sheath, which is dominantly governed by negative substrate bias. (C) 2012 Elsevier B.V. All rights reserved.
Language英语
WOS IDWOS:000323094500038
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/137540
Collection中国科学院大连化学物理研究所
Affiliation1.Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China
2.Univ Sci & Technol Liaoning, Dept Phys, Anshan 114051, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, Key Lab Chem Laser, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Min,Liu, Lei,Yang, Xiaoxu,et al. Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study[J]. SURFACE & COATINGS TECHNOLOGY,2013,229:186-190.
APA Zhang, Min.,Liu, Lei.,Yang, Xiaoxu.,Xu, Feifei.,Liu, Chengsen.,...&Li, Mengke.(2013).Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study.SURFACE & COATINGS TECHNOLOGY,229,186-190.
MLA Zhang, Min,et al."Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study".SURFACE & COATINGS TECHNOLOGY 229(2013):186-190.
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