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Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study
Zhang, Min1; Liu, Lei2; Yang, Xiaoxu1; Xu, Feifei1; Liu, Chengsen1; Gong, Faquan3; Li, Mengke1
关键词Pulsed Bias Arc Ion Plating Pulsed Plasma Titanium Dioxide Films Sheath Dynamics
刊名SURFACE & COATINGS TECHNOLOGY
2013-08-25
DOI10.1016/j.surfcoat.2012.05.083
229页:186-190
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Materials Science, Coatings & Films ; Physics, Applied
研究领域[WOS]Materials Science ; Physics
英文摘要Dielectric TiO2 thin films were fabricated on p-(100) Si substrates by arc ion plating (Alp). The effects of pulsed negative bias on phase structure and growth of TiO2 films were investigated by applying a pulsed bias ranging from 0 V to -900 V on the substrates. Phase, microstructure, and growth morphology of TiO2 films prepared at different bias voltages were evaluated with GIXRD and AFM. The results show that pulsed bias exerts an obvious influence on phase structure and growth morphology. High substrate bias facilitates the formation of rutile phase and a (220) preferred orientation is observed in TiO2 films obtained at -900 V. AFM images show that pulsed substrate bias exerts a strong influence on the growth of TiO2 films. As for the TiO2 films obtained at 0 V, surface islands are tiny, the density of islands is high and RMS roughness is about 1.1 nm. While for the TiO2 films at -900 V, surface islands are large, the island density is relative low and RMS roughness is around 3.8 nm, three times larger than the case of 0 V. To explain the phenomena observed in this study, pulsed plasma sheath model was used to simulate the ion sheath dynamics. The time evolutions within a pulsed period of the potential distribution and ion density distribution in the sheath were evaluated. By analyzing experimental and simulated results, it can be concluded that film growth and property relate close to ion density and energy in the sheath, which is dominantly governed by negative substrate bias. (C) 2012 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000323094500038
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/137540
专题中国科学院大连化学物理研究所
作者单位1.Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China
2.Univ Sci & Technol Liaoning, Dept Phys, Anshan 114051, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, Key Lab Chem Laser, Dalian 116023, Peoples R China
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Zhang, Min,Liu, Lei,Yang, Xiaoxu,et al. Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study[J]. SURFACE & COATINGS TECHNOLOGY,2013,229:186-190.
APA Zhang, Min.,Liu, Lei.,Yang, Xiaoxu.,Xu, Feifei.,Liu, Chengsen.,...&Li, Mengke.(2013).Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study.SURFACE & COATINGS TECHNOLOGY,229,186-190.
MLA Zhang, Min,et al."Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study".SURFACE & COATINGS TECHNOLOGY 229(2013):186-190.
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