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Effects of the oxidation extent of the SiC surface on the performance of Ni/SiC methanation catalysts
Zhang, Guoquan1,2; Peng, Jiaxi1; Sun, Tianjun1; Wang, Shudong1
关键词Methanation Silicon Carbide Surface Oxidation Nickel High-temperature Stability
刊名CHINESE JOURNAL OF CATALYSIS
2013-09-01
DOI10.1016/S1872-2067(12)60639-1
34期:9页:1745-1755
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
类目[WOS]Chemistry, Applied ; Chemistry, Physical ; Engineering, Chemical
研究领域[WOS]Chemistry ; Engineering
关键词[WOS]AREA SILICON-CARBIDE ; SYNTHETIC NATURAL-GAS ; STRUCTURE SENSITIVITY ; HYDROGEN-PRODUCTION ; SUPPORT ; SYNGAS ; BUTANE
英文摘要Ni/SiC methanation catalysts were prepared by an incipient wetness impregnation method. Effects of the oxidation extent of the SiC surface on low-temperature activity and high-temperature stability of the catalysts were investigated. Samples were characterized by thermogravimetry and differential scanning calorimetry, N-2 adsorption-desorption, Fourier transform infrared spectra, temperature-programmed desorption of NH3, X-ray diffraction, temperature-programmed reduction of H-2 and H-2 chemisorption. The surface area and nickel dispersion of the catalysts decreased with increasing oxidation temperature of the SiC supports, while both reducibility and stability of the catalysts increased. The Ni/SiC catalyst with the unoxidized SiC support showed the poorest high-temperature stability probably because of the weak anchorage of Ni particles to the support. The Ni/SiC samples prepared on the SiC supports oxidized at 500 and 700 degrees C had better low-temperature activity and high-temperature stability, which was because Ni particles were well dispersed on and strongly anchored to these properly oxidized supports. The Ni/SiC catalyst with the SiC support oxidized at 900 degrees C showed the worst low-temperature activity because of the larger Ni particles caused by the less active oxide layer due to the overoxidation of the support. (C) 2013, Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000324664900015
引用统计
被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/137839
专题中国科学院大连化学物理研究所
作者单位1.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Liaoning, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
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Zhang, Guoquan,Peng, Jiaxi,Sun, Tianjun,et al. Effects of the oxidation extent of the SiC surface on the performance of Ni/SiC methanation catalysts[J]. CHINESE JOURNAL OF CATALYSIS,2013,34(9):1745-1755.
APA Zhang, Guoquan,Peng, Jiaxi,Sun, Tianjun,&Wang, Shudong.(2013).Effects of the oxidation extent of the SiC surface on the performance of Ni/SiC methanation catalysts.CHINESE JOURNAL OF CATALYSIS,34(9),1745-1755.
MLA Zhang, Guoquan,et al."Effects of the oxidation extent of the SiC surface on the performance of Ni/SiC methanation catalysts".CHINESE JOURNAL OF CATALYSIS 34.9(2013):1745-1755.
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