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Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films
Yan, F.1,4; Miao, S.2; Zhu, T. J.3; Lai, M. O.4; Lu, L.4
刊名APPLIED PHYSICS LETTERS
2012-03-26
DOI10.1063/1.3698155
100期:13
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Physics, Applied
研究领域[WOS]Physics
关键词[WOS]PIEZORESPONSE FORCE MICROSCOPY
英文摘要The BiFeO3 films were deposited on the SrTiO3 (001) substrates via tuning the thickness of the SrRuO3 (SRO) bottom electrode by pulsed laser deposition. The macroscopic ferroelectric and dielectric properties were dramatically impacted by the various nanoscale domain structures for both films due to the tunable SRO thickness. The nanoscale domain switching behaviors for both films were investigated via piezoresponse force microscopy, and results suggest that the domain structure could be changed by tuning the strain state. The surface potential investigation indicates that strain helps increase data storage density and stability. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698155]
语种英语
WOS记录号WOS:000302230800055
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文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/137997
专题中国科学院大连化学物理研究所
作者单位1.Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
3.Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
4.Natl Univ Singapore, Dept Mech Engn, Singapore 117576, Singapore
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Yan, F.,Miao, S.,Zhu, T. J.,et al. Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films[J]. APPLIED PHYSICS LETTERS,2012,100(13).
APA Yan, F.,Miao, S.,Zhu, T. J.,Lai, M. O.,&Lu, L..(2012).Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films.APPLIED PHYSICS LETTERS,100(13).
MLA Yan, F.,et al."Strain effect on the surface potential and nanoscale switching characteristics of multiferroic BiFeO3 thin films".APPLIED PHYSICS LETTERS 100.13(2012).
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