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Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels
Mo, Y; Ottinger, C; Shen, G
刊名JOURNAL OF CHEMICAL PHYSICS
1998-07-01
109期:1页:151-156
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Physics, Atomic, Molecular & Chemical
研究领域[WOS]Physics
关键词[WOS]INTRAMOLECULAR ENERGY-TRANSFER ; COLLISION-INDUCED TRANSITIONS ; TRIPLET MIXED STATES ; QUANTUM INTERFERENCE ; N2(A' 5-SIGMA-G+) ; TERM ENERGY ; 3-PI-G)
英文摘要The collision-induced emission from perturbed NO(B (2)Pi/a (4)Pi) ("gateway") levels, previously studied by us using a beam/target gas cell configuration, was re-examined by crossing the NO(a (4)Pi) beam with a target gas jet. Moving the observation point along the primary beam, spatially resolved NO(B, v = 0 and 3) gateway emission profiles were recorded. Two types of measurements were made: (a) Applying a magnetic field at the collision zone, the B, v = 0 emission was quenched within the field, but reappeared at the field exit. This "freezing" confirms the mechanism of the gateway quenching as formulated earlier. (b) In the absence of a magnetic field, anomalously long radiative lifetimes were determined from both the v = 0 and v = 3 emission profiles. This direct observation of the long-lived eigenstate resulting from the perturbation is consistent with earlier measurements on the other, short-lived component. (C) 1998 American Institute of Physics. [S0021-9606(98)00825-3].
语种英语
WOS记录号WOS:000075255300018
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被引频次:3[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/138125
专题中国科学院大连化学物理研究所
作者单位1.Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
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Mo, Y,Ottinger, C,Shen, G. Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels[J]. JOURNAL OF CHEMICAL PHYSICS,1998,109(1):151-156.
APA Mo, Y,Ottinger, C,&Shen, G.(1998).Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels.JOURNAL OF CHEMICAL PHYSICS,109(1),151-156.
MLA Mo, Y,et al."Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels".JOURNAL OF CHEMICAL PHYSICS 109.1(1998):151-156.
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