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题名: Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels
作者: Mo, Y;  Ottinger, C;  Shen, G
刊名: JOURNAL OF CHEMICAL PHYSICS
发表日期: 1998-07-01
卷: 109, 期:1, 页:151-156
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Physics, Atomic, Molecular & Chemical
研究领域[WOS]: Physics
英文摘要: The collision-induced emission from perturbed NO(B (2)Pi/a (4)Pi) ("gateway") levels, previously studied by us using a beam/target gas cell configuration, was re-examined by crossing the NO(a (4)Pi) beam with a target gas jet. Moving the observation point along the primary beam, spatially resolved NO(B, v = 0 and 3) gateway emission profiles were recorded. Two types of measurements were made: (a) Applying a magnetic field at the collision zone, the B, v = 0 emission was quenched within the field, but reappeared at the field exit. This "freezing" confirms the mechanism of the gateway quenching as formulated earlier. (b) In the absence of a magnetic field, anomalously long radiative lifetimes were determined from both the v = 0 and v = 3 emission profiles. This direct observation of the long-lived eigenstate resulting from the perturbation is consistent with earlier measurements on the other, short-lived component. (C) 1998 American Institute of Physics. [S0021-9606(98)00825-3].
关键词[WOS]: INTRAMOLECULAR ENERGY-TRANSFER ;  COLLISION-INDUCED TRANSITIONS ;  TRIPLET MIXED STATES ;  QUANTUM INTERFERENCE ;  N2(A' 5-SIGMA-G+) ;  TERM ENERGY ;  3-PI-G)
语种: 英语
WOS记录号: WOS:000075255300018
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/138125
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China

Recommended Citation:
Mo, Y,Ottinger, C,Shen, G. Freezing of NO gateway emission by a magnetic field and very long field-free lifetimes of perturbed NO(a(4)Pi) levels[J]. JOURNAL OF CHEMICAL PHYSICS,1998,109(1):151-156.
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