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题名: Laser-induced luminescence spectroscopy of ZnO/SiO2
作者: Chen, J;  Feng, ZC;  Ying, PL;  Li, C
关键词: laser induced luminescence spectroscopy ;  ZnO ;  oxygen vacancy ;  green band ;  orange band
刊名: CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE
发表日期: 2004-11-10
卷: 25, 期:11, 页:2074-2077
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Multidisciplinary
研究领域[WOS]: Chemistry
英文摘要: ZnO/SIO, materials with different ZnO loadings were prepared by incipient wetness impregnation method in different calcination atmospheres. A home-built laser-induced luminescence spectroscopy setup was applied to studying the luminescent behavior of these materials. The continuous wave He-Cd laser (lambda= 325 nm) was used as the excitation source. It is found that the samples calcined in air mainly show the orange luminescence band (centered at about 670 nm), but the samples calcined in Ar mainly exhibit the green luminescence band(centered at about 540 nm). Interestingly, the orange luminescence band is changed into the green luminescence band after the ZnO/SiO2 was treated in air and calcined in Ar again, and the green luminescence band is changed into the orange luminescence band after the ZnO/SiO2 was treated in Ar and further calcined in air. These results suggest that the visible luminescence bands of ZnO are ascribed to the oxygen vacancies in ZnO. The green luminescence band is ascribed to the state with a high density of oxygen vacancies; and the orange luminescence band is attributed to the state with less oxygen vacancies. The XRD patterns show that ZnO in these materials exists as a wurtzite structure. UV-Vis and Raman spectra indicate that most ZnO is formed in the form of macrocrystal on SiO, Our results also demonstrate that the laser-induced luminescence spectroscopy is a powerful technique to characterize the defect sites, particularly the oxygen deficient in semiconductor materials.
关键词[WOS]: ZINC-OXIDE ;  ZNO ;  SURFACE ;  DEFECTS ;  OXYGEN ;  GREEN ;  FILMS ;  PHOTOLUMINESCENCE ;  EMISSION ;  TIO2
语种: 英语
WOS记录号: WOS:000225248100026
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/138428
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis Basis, Dalian 116023, Peoples R China

Recommended Citation:
Chen, J,Feng, ZC,Ying, PL,et al. Laser-induced luminescence spectroscopy of ZnO/SiO2[J]. CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE,2004,25(11):2074-2077.
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