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题名: Effect of the growth conditions on infrared upconversion efficiency of CaS : Eu, Sm thin films
作者: Fan, WH;  Hou, X;  Zhao, W;  Gao, XJ;  Zou, W;  Liu, Y
刊名: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
发表日期: 2001-07-01
卷: 73, 期:1, 页:115-119
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Materials Science, Multidisciplinary ;  Physics, Applied
研究领域[WOS]: Materials Science ;  Physics
英文摘要: High-quality electron-trapping thin films CaS: Eu, Sm with red light output have been successfully deposited on quartz and single-crystal silicon substrates by electron beam evaporation (EBE) and radio frequency (RF) magnetron sputtering in vacuum and H2S partial pressures. Infrared upconversion efficiency of CaS: Eu, Sm thin films under different growth conditions has been investigated by using ultrashort infrared (IR) laser pulse with 20ps (full width at half-maximum (FWHM)). The results show that upconversion efficiency of CaS: Eu, Sm thin films depends strongly on growth conditions in spite of the existence of "exhaustion" phenomena. Microstructures identified by X-ray diffraction (XRD) indicate that crystallinity of CaS films relies on both substrate materials and growth conditions. The stoichiometric composition of CaS films was measured by secondary-ion mass spectrometry (SIMS). The post-annealing process was found to promote grain growth and activate strong luminescence so that it could obviously improve upconversion efficiency of CaS: Eu, Sm films, even though it had negative influence on transmittance and spatial resolution of these films.
关键词[WOS]: ELECTRON-TRAPPING MATERIALS
语种: 英语
WOS记录号: WOS:000169584100017
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/138971
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
2.Acad Sinica, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Technol, Xian 710068, Peoples R China
3.Xian Jiao Tong Univ, Fac Sci, Inst Modern Phys, Xian 710049, Peoples R China

Recommended Citation:
Fan, WH,Hou, X,Zhao, W,et al. Effect of the growth conditions on infrared upconversion efficiency of CaS : Eu, Sm thin films[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2001,73(1):115-119.
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