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Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts
Yang, YL; Xu, HY; Li, WZ
关键词Methane Ethane Ethylene Nickel Catalyst Metal-semiconductor Interaction
刊名ACTA PHYSICO-CHIMICA SINICA
2001-09-01
DOI10.3866/PKU.WHXB20010902
17期:9页:773-775
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Chemistry, Physical
研究领域[WOS]Chemistry
关键词[WOS]METHANE ; SELECTIVITY
英文摘要Influence of the additions of different type semiconductor oxides to Ni-based catalyst on the characteristics of carbon deposition of CH4, C2H6 and C2H4 cracking was studied by using pulse microreaction technique. It was discovered that, the addition of n-type semiconductor CeO2 to Ni catalyst would decrease carbon deposition activity of CH4 and C2H6 cracking, whereas the addition of p-type semiconductor Co3O4 would increase carbon deposition activity of CH4 and C2H6 cracking. On the other hand, the effect of semiconductor oxide additives on the characteristics of carbon deposition of C2H4 cracking is opposite to that of CH4 and C2H6 due to the different activated mechanism. XPS results reveal that there is a metal-semiconductor interaction (MScI) between active metal Ni and semiconductor oxide, which is the most important factor leads to the above phenomenon.
语种英语
WOS记录号WOS:000171302100002
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/139023
专题中国科学院大连化学物理研究所
作者单位Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
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GB/T 7714
Yang, YL,Xu, HY,Li, WZ. Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts[J]. ACTA PHYSICO-CHIMICA SINICA,2001,17(9):773-775.
APA Yang, YL,Xu, HY,&Li, WZ.(2001).Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts.ACTA PHYSICO-CHIMICA SINICA,17(9),773-775.
MLA Yang, YL,et al."Study on carbon deposition of CH4, C2H6 and C2H4 cracking over Ni-based catalysts".ACTA PHYSICO-CHIMICA SINICA 17.9(2001):773-775.
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