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题名: Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma
作者: Zhang, YJ;  Yan, PX;  Wu, ZG;  Xu, JW;  Zhang, WW;  Li, X;  Liu, WM;  Xue, QJ
刊名: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
发表日期: 2004-11-01
DOI: 10.1116/1.1807836
卷: 22, 期:6, 页:2419-2423
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Materials Science, Coatings & Films ;  Physics, Applied
研究领域[WOS]: Materials Science ;  Physics
英文摘要: High-quality TiN films were successfully deposited on silicon and stainless-steel substrates at low temperature using an improved filtered cathode arc plasma technique developed in our lab. Atomic force microscope, x-ray diffractometer, x-ray photoelectron spectroscopy, and a nanoindenter were employed to characterize the TiN thin films. The microhardness of the TiN films have a high value up to 41 GPa. which is far higher than that of TiN Compounds deposited by conventional chemical vapor deposition and physical vapor deposition methods (20 Gpa or so). The films are of a stronger preferred crystalline orientation, very smooth surface, and high reflectivity. The effects of the negative substrate bias on the preferred crystalline orientation, surface roughness, deposition rate, and microhardness of Tin thin films are discussed in detail. (C) 2004 American Vacuum Society.
关键词[WOS]: THIN-FILMS ;  EVAPORATION ;  DEPOSITION
语种: 英语
WOS记录号: WOS:000225505900035
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/139345
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China
2.Chinese Acad Sci, Inst Chem Phys, State Key Lab Solia Lubricat, Lanzhou 730000, Peoples R China

Recommended Citation:
Zhang, YJ,Yan, PX,Wu, ZG,et al. Preparation and characterization of high-quality TiN films at low temperature by filtered cathode arc plasma[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2004,22(6):2419-2423.
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