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题名: The study of doped DLC films by Ti ion implantation
作者: Cui, L;  Li, GQ;  Chen, WW;  Mu, ZX;  Zhang, CW;  Wang, L
关键词: diamond-like carbon films ;  ion implantation ;  Ti doped
刊名: THIN SOLID FILMS
发表日期: 2005-03-22
卷: 475, 期:1-2, 页:279-282
收录类别: ISTP ;  SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Materials Science, Multidisciplinary ;  Materials Science, Coatings & Films ;  Physics, Applied ;  Physics, Condensed Matter
研究领域[WOS]: Materials Science ;  Physics
英文摘要: Diamond-like carbon (DLC) films were prepared by unbalanced magnetron sputtering. Ti-doped DLC films were obtained by Ti ion implanted into the achieved DLC films using metal vapor vacuum arc (MEVVA). The effects of Ti+ ion implantation on the surface morphology, structure, and tribological properties of the DLC films were investigated by means of atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and friction measurement. The smooth and uniform Ti-doped film with the surface roughness of 0.595 nm was obtained. Raman result revealed that the formation of DLC films and sp(2) bonds content increase by Ti+ ion implantation. TEM showed that the nanocrystalline phases of TiC were formed in the films. Ti+ was implanted into the interface between C and substrate, detecting the sputtering depth profiles of the film by XPS; thus, the interface was widened due to reserve diffusion. Tribological test experiment indicated that friction coefficient of the films decreased to approximately 0.15 by Ti+ ion implantation. (C) 2004 Published by Elsevier B.V.
关键词[WOS]: DIAMOND-LIKE CARBON ;  THIN-FILMS ;  COATINGS
语种: 英语
WOS记录号: WOS:000227268600055
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/139749
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion & Electron, Dalian 116024, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
3.Dalian Univ Technol, Inst Met & Technol, Dalian 116024, Peoples R China

Recommended Citation:
Cui, L,Li, GQ,Chen, WW,et al. The study of doped DLC films by Ti ion implantation[J]. THIN SOLID FILMS,2005,475(1-2):279-282.
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