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Photolummescence enhancement of SnO2 : Eu by Mg2+ doping
Fu, XY; Niu, SY; Zhang, HW; Min, QW; Xin, Q
关键词Optical Properties Semiconductors Nanosized Materials Oxides
刊名MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
2005-11-15
DOI10.1016/j.mseb.2005.06.018
123期:1页:45-49
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Materials Science, Multidisciplinary ; Physics, Condensed Matter
研究领域[WOS]Materials Science ; Physics
关键词[WOS]ENERGY-TRANSFER ; THIN-FILM ; LUMINESCENCE ; PHOTOLUMINESCENCE ; FLUORESCENCE ; SENSITIVITY ; PHOSPHORS ; CRYSTALS ; OXIDE ; IONS
英文摘要The influence of Mg2+ doping on the crystallization behavior and enhancement in photoluminescence intensity of SnO2:Eu was investigated. Highly homogeneous and pure samples were prepared by Pechini type sol-gel method and were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), absorption spectroscopy and photoluminescence. The results indicated that the incorporation of Mg2+, ions into SnO2 lattice could induce a remarkable increase of photoluminescence and the primary reasons were deduced. (c) 2005 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000232196200007
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被引频次:16[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/139830
专题中国科学院大连化学物理研究所
作者单位1.Liaoning Normal Univ, Coll Chem & Chem Engn, Dalian 116029, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
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Fu, XY,Niu, SY,Zhang, HW,et al. Photolummescence enhancement of SnO2 : Eu by Mg2+ doping[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2005,123(1):45-49.
APA Fu, XY,Niu, SY,Zhang, HW,Min, QW,&Xin, Q.(2005).Photolummescence enhancement of SnO2 : Eu by Mg2+ doping.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,123(1),45-49.
MLA Fu, XY,et al."Photolummescence enhancement of SnO2 : Eu by Mg2+ doping".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 123.1(2005):45-49.
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