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题名: STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO
作者: Yu Chunying1;  Chen Yixuan1;  Sheng Shishan1;  Li Wenzhao1
刊名: ACTA PHYSICO-CHIMICA SINICA
发表日期: 1986
DOI: 10.3866/PKU.WHXB19860102
卷: 2, 期:1, 页:6-12
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Physical
研究领域[WOS]: Chemistry
英文摘要: Electric property across the Pt film-TiO2 and Pt film-ZnO interface was characterized by the I-V curves. It was seen clearly that by H-2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact.
语种: 英语
WOS记录号: WOS:000207568300002
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/140127
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Acad Sinica, Dalian Inst Chem Phys, Dalian, Peoples R China

Recommended Citation:
Yu Chunying,Chen Yixuan,Sheng Shishan,et al. STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO[J]. ACTA PHYSICO-CHIMICA SINICA,1986,2(1):6-12.
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