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STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO
Yu Chunying; Chen Yixuan; Sheng Shishan; Li Wenzhao
刊名ACTA PHYSICO-CHIMICA SINICA
1986
DOI10.3866/PKU.WHXB19860102
2期:1页:6-12
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences
类目[WOS]Chemistry, Physical
研究领域[WOS]Chemistry
英文摘要Electric property across the Pt film-TiO2 and Pt film-ZnO interface was characterized by the I-V curves. It was seen clearly that by H-2 treatment at high temperature the original rectifying property of the metal-semiconductor junction was changed into ohmic resistance contact.
语种英语
WOS记录号WOS:000207568300002
引用统计
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/140127
专题中国科学院大连化学物理研究所
作者单位Acad Sinica, Dalian Inst Chem Phys, Dalian, Peoples R China
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GB/T 7714
Yu Chunying,Chen Yixuan,Sheng Shishan,et al. STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO[J]. ACTA PHYSICO-CHIMICA SINICA,1986,2(1):6-12.
APA Yu Chunying,Chen Yixuan,Sheng Shishan,&Li Wenzhao.(1986).STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO.ACTA PHYSICO-CHIMICA SINICA,2(1),6-12.
MLA Yu Chunying,et al."STUDIES ON METAL-SEMICONDUCTOR INTERACTION: THE EFFECT OF THE INTERFACIAL STRUCTURE ON THE ELECTROCHEMICAL BEHAVIOR OF Pt-TiO2 AND Pt-ZnO".ACTA PHYSICO-CHIMICA SINICA 2.1(1986):6-12.
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