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题名: High-yield TiO(2) nanowire synthesis and single nanowire field-effect transistor fabrication
作者: Baik, Jeong Min1;  Kim, Myung Hwa1;  Larson, Christopher1;  Chen, Xihong1;  Guo, Shujing2;  Wodtke, Alec M.1;  Moskovits, Martin1
刊名: APPLIED PHYSICS LETTERS
发表日期: 2008-06-16
DOI: 10.1063/1.2949086
卷: 92, 期:24
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
英文摘要: We report a facile method for synthesizing single-crystal rutile TiO(2) nanowires using atmospheric-pressure, chemical vapor deposition with Ti and TiO as precursors. The synthesis is found to depend critically on the predeposition of a layer of metallic Ti on the Ni catalysts layer. The omission of this step seems previously to have impeded the efficient synthesis of titania nanowires. Single-nanowire field-effect transistors showed the TiO(2) nanowires to be n-type semiconductors with conductance activation energy of similar to 58 meV. (C) 2008 American Institute of Physics.
关键词[WOS]: CELLS
语种: 英语
WOS记录号: WOS:000256934900060
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/141236
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Univ Calif Santa Barbara, Dept Chem & Biochem, Santa Barbara, CA 93106 USA
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China

Recommended Citation:
Baik, Jeong Min,Kim, Myung Hwa,Larson, Christopher,et al. High-yield TiO(2) nanowire synthesis and single nanowire field-effect transistor fabrication[J]. APPLIED PHYSICS LETTERS,2008,92(24).
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