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题名: Thermal change of organic light-emitting ALQ3 thin films
作者: Wang, Mei-Han1;  Konya, Takayuki;  Yahata, Masahiro1;  Sawada, Yutaka1, 4;  Kishi, Akira2;  Uchida, Takayuki1, 2;  Lei, Hao1;  Hoshi, Yoichi1;  Sun, Li-Xian3
关键词: Alq3 thin film ;  Thermal crystallization ;  High-temperature X-ray diffraction ;  Thermal change ;  X-ray reflectometry
刊名: JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY
发表日期: 2010
DOI: 10.1007/s10973-009-0486-5
卷: 99, 期:1, 页:117-122
收录类别: SCI ;  ISTP
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Analytical ;  Chemistry, Physical
研究领域[WOS]: Chemistry
英文摘要: A series of Alq3 thin films with the thicknesses of 50, 100, and 200 nm was deposited on Si substrates at room temperature using the thermal evaporation method. The thermal crystallization process of Alq3 thin films, especially 50 nm thick films, was successfully examined using high-temperature X-ray diffraction (HT-XRD) with the in-plane scan mode. Film thickness, density, and changes in surface roughness while heating were determined using X-ray reflectometry (XRR). The decreased density and increased surface roughness, which were accompanied by sublimation, indicate the instability of the Alq3 film. Thus, thermal instability is a major factor for device failure.
关键词[WOS]: ALUMINUM TRIS(8-HYDROXYQUINOLINE) ALQ(3) ;  X-RAY REFLECTOMETRY ;  DEVICES ;  DEGRADATION ;  NANOSCALE ;  STABILITY
语种: 英语
WOS记录号: WOS:000274213300019
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/141987
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Tokyo Polytech Univ, Ctr Hyper Media Res, Kanagawa 2430297, Japan
2.Rigaku Corp, Tokyo 1968666, Japan
3.Chinese Acad Sci, Mat & Thermochem Lab, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
4.Tokyo Polytech Univ, Dept Ind Chem, Grad Sch Engn, Kanagawa 2430297, Japan

Recommended Citation:
Wang, Mei-Han,Konya, Takayuki,Yahata, Masahiro,et al. Thermal change of organic light-emitting ALQ3 thin films[J]. JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY,2010,99(1):117-122.
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