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题名: Formation of intra-island grain boundaries in pentacene monolayers
作者: Zhang, Jian1, 2;  Wu, Yu3;  Duhm, Steffen1, 4;  Rabe, Juergen P.1;  Rudolf, Petra3;  Koch, Norbert1
刊名: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
发表日期: 2011
DOI: 10.1039/c1cp21506j
卷: 13, 期:47, 页:21102-21108
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Physical ;  Physics, Atomic, Molecular & Chemical
研究领域[WOS]: Chemistry ;  Physics
英文摘要: To assess the formation of intra-island grain boundaries during the early stages of pentacene film growth, we studied sub-monolayers of pentacene on pristine silicon oxide and silicon oxide with high pinning centre density (induced by UV/O(3) treatment). We investigated the influence of the kinetic energy of the impinging molecules on the sub-monolayer growth by comparing organic molecular beam deposition (OMBD) and supersonic molecular beam deposition (SuMBD). For pentacene films fabricated by OMBD, higher pentacene island-density and higher polycrystalline island density were observed on UV/O(3)-treated silicon oxide as compared to pristine silicon oxide. Pentacene films deposited by SuMBD exhibited about one order of magnitude lower island-and polycrystalline island densities compared to OMBD, on both types of substrates. Our results suggest that polycrystalline growth of single islands on amorphous silicon oxide is facilitated by structural/chemical surface pinning centres, which act as nucleation centres for multiple grain formation in a single island. Furthermore, the overall lower intra-island grain boundary density in pentacene films fabricated by SuMBD reduces the number of charge carrier trapping sites specific to grain boundaries and should thus help achieving higher charge carrier mobilities, which are advantageous for their use in organic thin-film transistors.
关键词[WOS]: THIN-FILM TRANSISTORS ;  FIELD-EFFECT TRANSISTORS ;  UV/OZONE TREATMENT ;  HIGH-MOBILITY ;  GROWTH ;  PERFORMANCE ;  LAYER ;  MORPHOLOGY ;  INTERFACE ;  TRANSPORT
语种: 英语
WOS记录号: WOS:000297364300023
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/142661
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
2.Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
3.Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
4.Chiba Univ, Grad Sch Adv Integrat Sci, Chiba 2638522, Japan

Recommended Citation:
Zhang, Jian,Wu, Yu,Duhm, Steffen,et al. Formation of intra-island grain boundaries in pentacene monolayers[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2011,13(47):21102-21108.
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