DICP OpenIR
Subject Area物理化学
Degradation and stabilization of perovskite membranes containing silicon impurity at low temperature
Liu, Yan1,2; Zhu, Xuefeng1; Li, Mingrun1; Li, Wenping1,2; Yang, Weishen1; Zhu XF(朱雪峰); Yang WS(杨维慎)
KeywordMiec Membrane Silicon Impurity Low Temperature Degradation Perovskite
Source PublicationJOURNAL OF MEMBRANE SCIENCE
2015-10-15
DOI10.1016/j.memsci.2015.05.063
Volume492Issue:1Pages:173-180
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectEngineering, Chemical ; Polymer Science
WOS Research AreaEngineering ; Polymer Science
WOS KeywordOXYGEN PERMEABLE MEMBRANE ; DUAL-PHASE MEMBRANES ; MIXED-OXIDE (A,B)O ; CERAMIC MEMBRANES ; CATHODE MATERIAL ; STRUCTURAL STABILITY ; HYDROGEN-PRODUCTION ; POTENTIAL GRADIENT ; CO2 CAPTURE ; FUEL-CELLS
AbstractThe oxygen permeation flux of a mixed ionic-electronic conducting membrane BaCe0.1Co0.4Fe0.5O3-delta (BCCF) decreased by 62% after 477 h on-stream operation under air/He gradient at 600 degrees C. To understand this phenomenon, the spent membrane was examined via several characterization techniques. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDS) analyses revealed that the surface of the sweep side has a higher silicon impurity content than that of the feed side. In fact, the BCCF powder contained up to 140 ppm of silicon impurities, which originated from the original chemicals and/or was introduced during preparation of the material. After the 477 h operation at 600 degrees C, a similar to 25 nm-thick amorphous silicon-containing layer was detected by high resolution transmission electron microscopy (HRTEM) on the sweep side surface of the spent membrane. A possible mechanism related to silicon migration from membrane bulk to surfaces was proposed to explain the degradation phenomenon. To overcome the negative effects of silicon impurity, a simple and effective method was proposed to stabilize the oxygen permeation fluxes at low temperatures, i.e. coating a porous Sm0.5Sr0.5CoO3-delta (SSC) catalyst on both surfaces of the membrane to accommodate the silicon impuriLy and accelerate oxygen exchange kinetics. With this method, the oxygen permeation was stabilized for 500 h at 600 degrees C. (C) 2015 Elsevier B.V. All rights reserved.
Language英语
WOS IDWOS:000358433600019
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/143769
Collection中国科学院大连化学物理研究所
Corresponding AuthorZhu XF(朱雪峰); Yang WS(杨维慎)
Affiliation1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100039, Peoples R China
Recommended Citation
GB/T 7714
Liu, Yan,Zhu, Xuefeng,Li, Mingrun,et al. Degradation and stabilization of perovskite membranes containing silicon impurity at low temperature[J]. JOURNAL OF MEMBRANE SCIENCE,2015,492(1):173-180.
APA Liu, Yan.,Zhu, Xuefeng.,Li, Mingrun.,Li, Wenping.,Yang, Weishen.,...&杨维慎.(2015).Degradation and stabilization of perovskite membranes containing silicon impurity at low temperature.JOURNAL OF MEMBRANE SCIENCE,492(1),173-180.
MLA Liu, Yan,et al."Degradation and stabilization of perovskite membranes containing silicon impurity at low temperature".JOURNAL OF MEMBRANE SCIENCE 492.1(2015):173-180.
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