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题名: p-Layer bandgap engineering for high efficiency thin film silicon solar cells
作者: Liu, Xiaojing1, 2;  Zi, Wei1, 2;  Liu, Shengzhong (Frank)1, 2, 3
关键词: p-Layer ;  Ellipsometry ;  V-oc ;  Solar cell ;  Band gap
刊名: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
发表日期: 2015-11-01
DOI: 10.1016/j.mssp.2015.04.011
卷: 39, 页:192-199
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Engineering, Electrical & Electronic ;  Materials Science, Multidisciplinary ;  Physics, Applied ;  Physics, Condensed Matter
研究领域[WOS]: Engineering ;  Materials Science ;  Physics
英文摘要: Spectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and optical transmittance measurements were used to study and establish a correlation between the open-circuit voltage (V-oc) of solar cells and the p-layer optical band gap (E-p). It is found that the ellipsometry measurement can be used as an inline non-destructive diagnostic tool for p-layer deposition in commercial operation. The analysis of ellipsometric spectra, together with the optical transmittance data, shows that the best p-layer appears to be very fine nanocrystallites with an E-p 1.95 eV. HRTEM measurements reveal that the best p-layer is composed of nanocrystallites similar to 9 nm in size. It is also found that the p-layer exhibits very good transmittance, as high as similar to 91.6% at similar to 650 nm. These results have guided us to achieve high V-oc value 1.03 V for thin film silicon based single junction solar cell. (C) 2015 Elsevier Ltd. All rights reserved.
关键词[WOS]: TIME SPECTROSCOPIC ELLIPSOMETRY ;  REAL-TIME ;  OPTICAL FUNCTIONS ;  PHASE-DIAGRAMS ;  TECHNOLOGY ;  OPTIMIZATION ;  IMPROVEMENT ;  DEPOSITION ;  INTERFACE ;  PROGRESS
语种: 英语
WOS记录号: WOS:000361774100027
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/146564
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Natl Minist Educ, Key Lab Appl Surface & Colloid Chem, Xian 710062, Peoples R China
2.Shaanxi Normal Univ, Sch Mat Sci & Engn, Inst Adv Energy Mat, Xian 710062, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

Recommended Citation:
Liu, Xiaojing,Zi, Wei,Liu, Shengzhong . p-Layer bandgap engineering for high efficiency thin film silicon solar cells[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:192-199.
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