DICP OpenIR
p-Layer bandgap engineering for high efficiency thin film silicon solar cells
Liu, Xiaojing1,2; Zi, Wei1,2; Liu, Shengzhong (Frank)1,2,3
KeywordP-layer Ellipsometry V-oc Solar Cell Band Gap
Source PublicationMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
2015-11-01
DOI10.1016/j.mssp.2015.04.011
Volume39Pages:192-199
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectEngineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Research AreaEngineering ; Materials Science ; Physics
WOS KeywordTIME SPECTROSCOPIC ELLIPSOMETRY ; REAL-TIME ; OPTICAL FUNCTIONS ; PHASE-DIAGRAMS ; TECHNOLOGY ; OPTIMIZATION ; IMPROVEMENT ; DEPOSITION ; INTERFACE ; PROGRESS
AbstractSpectroscopic ellipsometry (SE), high resolution transmission electron microscopy (HRTEM), atomic force microscopy (AFM) and optical transmittance measurements were used to study and establish a correlation between the open-circuit voltage (V-oc) of solar cells and the p-layer optical band gap (E-p). It is found that the ellipsometry measurement can be used as an inline non-destructive diagnostic tool for p-layer deposition in commercial operation. The analysis of ellipsometric spectra, together with the optical transmittance data, shows that the best p-layer appears to be very fine nanocrystallites with an E-p 1.95 eV. HRTEM measurements reveal that the best p-layer is composed of nanocrystallites similar to 9 nm in size. It is also found that the p-layer exhibits very good transmittance, as high as similar to 91.6% at similar to 650 nm. These results have guided us to achieve high V-oc value 1.03 V for thin film silicon based single junction solar cell. (C) 2015 Elsevier Ltd. All rights reserved.
Language英语
WOS IDWOS:000361774100027
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/146564
Collection中国科学院大连化学物理研究所
Affiliation1.Natl Minist Educ, Key Lab Appl Surface & Colloid Chem, Xian 710062, Peoples R China
2.Shaanxi Normal Univ, Sch Mat Sci & Engn, Inst Adv Energy Mat, Xian 710062, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Liu, Xiaojing,Zi, Wei,Liu, Shengzhong . p-Layer bandgap engineering for high efficiency thin film silicon solar cells[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2015,39:192-199.
APA Liu, Xiaojing,Zi, Wei,&Liu, Shengzhong .(2015).p-Layer bandgap engineering for high efficiency thin film silicon solar cells.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,39,192-199.
MLA Liu, Xiaojing,et al."p-Layer bandgap engineering for high efficiency thin film silicon solar cells".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 39(2015):192-199.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Liu, Xiaojing]'s Articles
[Zi, Wei]'s Articles
[Liu, Shengzhong (Frank)]'s Articles
Baidu academic
Similar articles in Baidu academic
[Liu, Xiaojing]'s Articles
[Zi, Wei]'s Articles
[Liu, Shengzhong (Frank)]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Liu, Xiaojing]'s Articles
[Zi, Wei]'s Articles
[Liu, Shengzhong (Frank)]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.