中国科学院大连化学物理研究所机构知识库
Advanced  
DICP OpenIR  > 中国科学院大连化学物理研究所  > 期刊论文
题名: The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals
作者: Zheng, Daoyuan1, 3;  Zhang, Mingxing1, 2;  Zhao, Guangjiu1, 2
刊名: PHYSICAL CHEMISTRY CHEMICAL PHYSICS
发表日期: 2017-11-07
DOI: 10.1039/c7cp03787b
卷: 19, 期:41, 页:28175-28181
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Chemistry, Physical ;  Physics, Atomic, Molecular & Chemical
研究领域[WOS]: Chemistry ;  Physics
英文摘要: Herein, the promotion effects of thionation and isomerization on the carrier mobility properties of naphthalene diimide and thionated naphthalene diimide crystals were investigated in detail based on the Marcus-Hush theory and quantum-chemical calculations. The thionation of NDIs will improve the charge mobility of both electrons and holes, which is similar to the thionation of PDIs. The compound P only behaves as an n-type organic semiconductor (OSC), whereas the three other thionation structures have higher mobility values and can behave as p-type OSCs. For the cis/trans isomers of the two double-thionation structures, trans-S2 has a larger hole and electron carrier mobility than cis-S2; this is consistent with the experimental results obtained for cis-trans-isomers. A potential strategy for the development of high performance ambipolar OSCs is the substitution of O atoms by S atoms. These results will provide a guide for the design and optimization of OSCs via analysis of the relationship between carrier mobility and molecular crystal structures.
关键词[WOS]: FIELD-EFFECT TRANSISTORS ;  THIN-FILM TRANSISTORS ;  ORGANIC SEMICONDUCTORS ;  N-TYPE ;  ISOMERICALLY PURE ;  ELECTRONEGATIVE OLIGOTHIOPHENES ;  ELECTRONIC COUPLINGS ;  TRANSPORT PROPERTIES ;  DYNAMIC DISORDER ;  HOLE MOBILITIES
语种: 英语
WOS记录号: WOS:000413778800029
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/149788
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

Files in This Item:

There are no files associated with this item.


作者单位: 1.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
2.Tianjin Univ, Sch Sci, Dept Chem, Tianjin Key Lab Mol Optoelect Sci,Inst Chem, Tianjin 300072, Peoples R China
3.Chinese Acad Sci, Univ Chinese Acad Sci, Beijing 100049, Peoples R China

Recommended Citation:
Zheng, Daoyuan,Zhang, Mingxing,Zhao, Guangjiu. The promotion effects of thionation and isomerization on charge carrier mobility in naphthalene diimide crystals[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2017,19(41):28175-28181.
Service
 Recommend this item
 Sava as my favorate item
 Show this item's statistics
 Export Endnote File
Google Scholar
 Similar articles in Google Scholar
 [Zheng, Daoyuan]'s Articles
 [Zhang, Mingxing]'s Articles
 [Zhao, Guangjiu]'s Articles
CSDL cross search
 Similar articles in CSDL Cross Search
 [Zheng, Daoyuan]‘s Articles
 [Zhang, Mingxing]‘s Articles
 [Zhao, Guangjiu]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace