DICP OpenIR
Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System
Ye, Yun1,2; Wang, Xiuli1; Ye, Sheng1; Xu, Yuxing1,2; Feng, Zhaochi1; Li, Can1
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
2017-08-17
DOI10.1021/acs.jpcc.7b05061
Volume121Issue:32Pages:17112-17120
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS KeywordULTRAFAST ELECTRON-TRANSFER ; SEMICONDUCTOR NANOCRYSTALS ; SURFACE-CHEMISTRY ; NANOROD HETEROSTRUCTURES ; CARRIER DYNAMICS ; METHYLENE-BLUE ; H-2 GENERATION ; DOTS ; PHOTOLUMINESCENCE ; SEPARATION
AbstractManipulation of the photoinduced hole dynamics is a key strategy to improve the H-2 evolution efficiency in quantum dots (QDs)-based photocatalytic systems. The ultrafast hole trapping by surface states of the QDs is beneficial to electron transfer but retards the trapped hole transfer. Whether ultrafast hole trapping is beneficial to the photo catalytic H2 evolution activity deserves to be investigated. We employed two types of CdSe QDs, QDs-1 and QDs-2, with tuned surface hole trap states to investigate the effect of ultrafast hole trapping on charge-transfer dynamics in the photocatalytic system. QDs-1 possesses higher density of surface hole trap states than QDs-2. Compared with QDs-2, the transfer dynamics of free electrons in QDs-1 to the proton reduction catalyst, Ni-2, is more promoted by hole trapping, characterized by the transient absorption spectroscopy and photoluminescence techniques. Interestingly, the free hole transfer from QDs-1 to the sacrificial reagent, ascorbic acid (AA), was also improved more. Moreover, the surface defects of the QDs serve as binding sites for Ni2+ and AA, further promoting the electron transfer and hole removal dynamics, respectively. Our results illustrate that the ultrafast hole trapping increases the H2 production activity in the actual CdSe QDs Ni2+ photocatalytic system.
Language英语
WOS IDWOS:000408179500010
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/149905
Collection中国科学院大连化学物理研究所
Affiliation1.Chinese Acad Sci, Dalian Natl Lab Clean Energy, State Key Lab Catalysis, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
Recommended Citation
GB/T 7714
Ye, Yun,Wang, Xiuli,Ye, Sheng,et al. Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2017,121(32):17112-17120.
APA Ye, Yun,Wang, Xiuli,Ye, Sheng,Xu, Yuxing,Feng, Zhaochi,&Li, Can.(2017).Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System.JOURNAL OF PHYSICAL CHEMISTRY C,121(32),17112-17120.
MLA Ye, Yun,et al."Charge-Transfer Dynamics Promoted by Hole Trap States in CdSe Quantum Dots-Ni2+ Photocatalytic System".JOURNAL OF PHYSICAL CHEMISTRY C 121.32(2017):17112-17120.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ye, Yun]'s Articles
[Wang, Xiuli]'s Articles
[Ye, Sheng]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ye, Yun]'s Articles
[Wang, Xiuli]'s Articles
[Ye, Sheng]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ye, Yun]'s Articles
[Wang, Xiuli]'s Articles
[Ye, Sheng]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.