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题名: Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates
作者: Dun, Chaochao1;  Hewitt, Corey A.1;  Li, Qi2;  Guo, Yang1, 3;  Jiang, Qike4;  Xu, Junwei1;  Marcus, Gabriel1;  Schall, Drew C.1;  Carroll, David L.1
关键词: 2D chalcogenide nanoplates ;  density functional theory ;  flexible thermoelectrics ;  laterally self-assembly ;  metal-semiconductor heterostructures
刊名: ADVANCED MATERIALS
发表日期: 2017-10-11
DOI: 10.1002/adma.201702968
卷: 29, 期:38
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences ;  Technology
类目[WOS]: Chemistry, Multidisciplinary ;  Chemistry, Physical ;  Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary ;  Physics, Applied ;  Physics, Condensed Matter
研究领域[WOS]: Chemistry ;  Science & Technology - Other Topics ;  Materials Science ;  Physics
英文摘要: Precise control of the selective growth of heterostructures with specific composition and functionalities is an emerging and extremely challenging topic. Here, the first investigation of the difference in binding energy between a series of metal-semiconductor heterostructures based on layered V-2-VI3 nanostructures is investigated by means of density functional theory. All lateral configurations show lower formation energy compared with that of the vertical ones, implying the selective growth of metal nanoparticles. The simulation results are supported by the successful fabrication of self-assembled Ag/Cu-nanoparticle-decorated p-type Sb2Te3 and n-type Bi2Te3 nanoplates at their lateral sites through a solution reaction. The detailed nucleation-growth kinetics are well studied with controllable reaction times and precursor concentrations. Accompanied by the preserved topological structure integrity and electron transfer on the semiconductor host, exceptional properties such as dramatically increased electrical conductivity are observed thanks to the pre-energy-filtering effect before carrier injection. A zigzag thermoelectric generator is built using Cu/Ag-decorated Sb2Te3 and Bi2Te3 as p-n legs to utilize the temperature gradient in the vertical direction. Synthetic approaches using similar chalcogenide nanoplates as building blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to other heterostructures with novel applications.
关键词[WOS]: DER-WAALS HETEROSTRUCTURES ;  DISLOCATION-DRIVEN GROWTH ;  FLUORIDE COMPOSITE ;  BI2SE3 ;  NANOSHEETS ;  DICHALCOGENIDES ;  CONDUCTIVITY ;  ELECTRONICS ;  ARRAYS ;  MOS2
语种: 英语
WOS记录号: WOS:000412452500026
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/150060
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Wake Forest Univ, Dept Phys, Ctr Nanotechnol & Mol Mat, Winston Salem, NC 27109 USA
2.IBM Thomas J Watson Ctr, Div Phys Sci, Yorktown Hts, NY 10598 USA
3.Donghua Univ, Coll Mat Sci & Engn, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
4.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China

Recommended Citation:
Dun, Chaochao,Hewitt, Corey A.,Li, Qi,et al. Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates[J]. ADVANCED MATERIALS,2017,29(38).
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