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Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates
Dun, Chaochao1; Hewitt, Corey A.1; Li, Qi2; Guo, Yang1,3; Jiang, Qike4; Xu, Junwei1; Marcus, Gabriel1; Schall, Drew C.1; Carroll, David L.1
Keyword2d Chalcogenide Nanoplates Density Functional Theory Flexible Thermoelectrics Laterally Self-assembly Metal-semiconductor Heterostructures
Source PublicationADVANCED MATERIALS
2017-10-11
DOI10.1002/adma.201702968
Volume29Issue:38
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordDER-WAALS HETEROSTRUCTURES ; DISLOCATION-DRIVEN GROWTH ; FLUORIDE COMPOSITE ; BI2SE3 ; NANOSHEETS ; DICHALCOGENIDES ; CONDUCTIVITY ; ELECTRONICS ; ARRAYS ; MOS2
AbstractPrecise control of the selective growth of heterostructures with specific composition and functionalities is an emerging and extremely challenging topic. Here, the first investigation of the difference in binding energy between a series of metal-semiconductor heterostructures based on layered V-2-VI3 nanostructures is investigated by means of density functional theory. All lateral configurations show lower formation energy compared with that of the vertical ones, implying the selective growth of metal nanoparticles. The simulation results are supported by the successful fabrication of self-assembled Ag/Cu-nanoparticle-decorated p-type Sb2Te3 and n-type Bi2Te3 nanoplates at their lateral sites through a solution reaction. The detailed nucleation-growth kinetics are well studied with controllable reaction times and precursor concentrations. Accompanied by the preserved topological structure integrity and electron transfer on the semiconductor host, exceptional properties such as dramatically increased electrical conductivity are observed thanks to the pre-energy-filtering effect before carrier injection. A zigzag thermoelectric generator is built using Cu/Ag-decorated Sb2Te3 and Bi2Te3 as p-n legs to utilize the temperature gradient in the vertical direction. Synthetic approaches using similar chalcogenide nanoplates as building blocks, as well as careful control of the dopant metallic nanoparticles or semiconductors, are believed to be broadly applicable to other heterostructures with novel applications.
Language英语
WOS IDWOS:000412452500026
Citation statistics
Cited Times:13[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/150060
Collection中国科学院大连化学物理研究所
Affiliation1.Wake Forest Univ, Dept Phys, Ctr Nanotechnol & Mol Mat, Winston Salem, NC 27109 USA
2.IBM Thomas J Watson Ctr, Div Phys Sci, Yorktown Hts, NY 10598 USA
3.Donghua Univ, Coll Mat Sci & Engn, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
4.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Dun, Chaochao,Hewitt, Corey A.,Li, Qi,et al. Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates[J]. ADVANCED MATERIALS,2017,29(38).
APA Dun, Chaochao.,Hewitt, Corey A..,Li, Qi.,Guo, Yang.,Jiang, Qike.,...&Carroll, David L..(2017).Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates.ADVANCED MATERIALS,29(38).
MLA Dun, Chaochao,et al."Self-Assembled Heterostructures: Selective Growth of Metallic Nanoparticles on V-2-VI3 Nanoplates".ADVANCED MATERIALS 29.38(2017).
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