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题名: Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
作者: Lu, Guangyuan1, 2, 3, 4;  Wu, Tianru1, 2;  Yang, Peng5;  Yang, Yingchao3;  Jin, Zehua3;  Chen, Weibing3;  Jia, Shuai3;  Wang, Haomin1, 2;  Zhang, Guanhua6;  Sun, Julong6;  Ajayan, Pulickel M.3;  Lou, Jun3;  Xie, Xiaoming1, 2, 7;  Jiang, Mianheng1, 2, 7
关键词: chemical vapor deposition ;  Cu-Ni alloy ;  graphene and h-BN in-plane heterostructures ;  high quality
刊名: ADVANCED SCIENCE
发表日期: 2017-09-01
DOI: 10.1002/advs.201700076
卷: 4, 期:9
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences ;  Technology
类目[WOS]: Chemistry, Multidisciplinary ;  Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary
研究领域[WOS]: Chemistry ;  Science & Technology - Other Topics ;  Materials Science
英文摘要: Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ;  BAND-GAP ;  ATMOSPHERIC-PRESSURE ;  STACKED GRAPHENE ;  GROWTH ;  FILMS ;  INTERFACE ;  DOMAINS ;  LAYERS ;  FOILS
语种: 英语
WOS记录号: WOS:000411148100015
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/150181
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China

Recommended Citation:
Lu, Guangyuan,Wu, Tianru,Yang, Peng,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9).
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