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Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
Lu, Guangyuan1,2,3,4; Wu, Tianru1,2; Yang, Peng5; Yang, Yingchao3; Jin, Zehua3; Chen, Weibing3; Jia, Shuai3; Wang, Haomin1,2; Zhang, Guanhua6; Sun, Julong6; Ajayan, Pulickel M.3; Lou, Jun3; Xie, Xiaoming1,2,7; Jiang, Mianheng1,2,7
关键词Chemical Vapor Deposition Cu-ni Alloy Graphene And H-bn In-plane Heterostructures High Quality
刊名ADVANCED SCIENCE
2017-09-01
DOI10.1002/advs.201700076
4期:9
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Physical Sciences ; Technology
类目[WOS]Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
研究领域[WOS]Chemistry ; Science & Technology - Other Topics ; Materials Science
关键词[WOS]CHEMICAL-VAPOR-DEPOSITION ; BAND-GAP ; ATMOSPHERIC-PRESSURE ; STACKED GRAPHENE ; GROWTH ; FILMS ; INTERFACE ; DOMAINS ; LAYERS ; FOILS
英文摘要Graphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
语种英语
WOS记录号WOS:000411148100015
引用统计
被引频次:7[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/150181
专题中国科学院大连化学物理研究所
作者单位1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
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GB/T 7714
Lu, Guangyuan,Wu, Tianru,Yang, Peng,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9).
APA Lu, Guangyuan.,Wu, Tianru.,Yang, Peng.,Yang, Yingchao.,Jin, Zehua.,...&Jiang, Mianheng.(2017).Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.ADVANCED SCIENCE,4(9).
MLA Lu, Guangyuan,et al."Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy".ADVANCED SCIENCE 4.9(2017).
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