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Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy
Lu, Guangyuan1,2,3,4; Wu, Tianru1,2; Yang, Peng5; Yang, Yingchao3; Jin, Zehua3; Chen, Weibing3; Jia, Shuai3; Wang, Haomin1,2; Zhang, Guanhua6; Sun, Julong6; Ajayan, Pulickel M.3; Lou, Jun3; Xie, Xiaoming1,2,7; Jiang, Mianheng1,2,7
KeywordChemical Vapor Deposition Cu-ni Alloy Graphene And H-bn In-plane Heterostructures High Quality
Source PublicationADVANCED SCIENCE
2017-09-01
DOI10.1002/advs.201700076
Volume4Issue:9
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS KeywordCHEMICAL-VAPOR-DEPOSITION ; BAND-GAP ; ATMOSPHERIC-PRESSURE ; STACKED GRAPHENE ; GROWTH ; FILMS ; INTERFACE ; DOMAINS ; LAYERS ; FOILS
AbstractGraphene/hexagonal boron nitride (h-BN) monolayer in-plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in-plane epitaxy of graphene/h-BN heterostructure is demonstrated on Cu-Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h-BN, graphene is found to nucleate at the corners of the as-formed h-BN grains, and the high growth rate for graphene minimizes the damage of graphene-growth process on h-BN lattice. As a result, high-quality graphene/h-BN in-plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in-plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
Language英语
WOS IDWOS:000411148100015
Citation statistics
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/150181
Collection中国科学院大连化学物理研究所
Affiliation1.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
2.CAS Ctr Excellence Superconducting Elect CENSE, Shanghai 200050, Peoples R China
3.Rice Univ, Dept Mat Sci & NanoEngn, Houston, TX 77005 USA
4.Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
5.Cent S Univ, Sch Phys & Elect, Changsha 410083, Hunan, Peoples R China
6.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
7.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China
Recommended Citation
GB/T 7714
Lu, Guangyuan,Wu, Tianru,Yang, Peng,et al. Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy[J]. ADVANCED SCIENCE,2017,4(9).
APA Lu, Guangyuan.,Wu, Tianru.,Yang, Peng.,Yang, Yingchao.,Jin, Zehua.,...&Jiang, Mianheng.(2017).Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy.ADVANCED SCIENCE,4(9).
MLA Lu, Guangyuan,et al."Synthesis of High-Quality Graphene and Hexagonal Boron Nitride Monolayer In-Plane Heterostructure on Cu-Ni Alloy".ADVANCED SCIENCE 4.9(2017).
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