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题名: Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer
作者: Cheng, Chuan-Hui1;  Zhang, Bi-Long1;  Sun, Chao1;  Li, Ruo-Xuan1;  Wang, Yuan1;  Tian, Wen-Ming2;  Zhao, Chun-Yi2;  Jin, Sheng-Ye2;  Liu, Wei-Feng1, 3;  Luo, Ying-Min1;  Du, Guo-Tong1, 4;  Cong, Shu-Lin1
刊名: JOURNAL OF APPLIED PHYSICS
发表日期: 2017-06-21
DOI: 10.1063/1.4986435
卷: 121
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences
类目[WOS]: Physics, Applied
研究领域[WOS]: Physics
英文摘要: A highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq(3) (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m(2). In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m(2) decreases from 13 to 8V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices. Published by AIP Publishing.
关键词[WOS]: ELECTRON-INJECTION LAYER ;  TRANSPARENT ;  DEVICES ;  EFFICIENCY
语种: 英语
WOS记录号: WOS:000404047400029
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/152087
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
3.Hainan Univ, Mech & Elect Engn Coll, Haikou 570228, Peoples R China
4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

Recommended Citation:
Cheng, Chuan-Hui,Zhang, Bi-Long,Sun, Chao,et al. Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer[J]. JOURNAL OF APPLIED PHYSICS,2017,121.
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