DICP OpenIR
Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer
Cheng, Chuan-Hui1; Zhang, Bi-Long1; Sun, Chao1; Li, Ruo-Xuan1; Wang, Yuan1; Tian, Wen-Ming2; Zhao, Chun-Yi2; Jin, Sheng-Ye2; Liu, Wei-Feng1,3; Luo, Ying-Min1; Du, Guo-Tong1,4; Cong, Shu-Lin1
Source PublicationJOURNAL OF APPLIED PHYSICS
2017-06-21
DOI10.1063/1.4986435
Volume121
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
WOS SubjectPhysics, Applied
WOS Research AreaPhysics
WOS KeywordELECTRON-INJECTION LAYER ; TRANSPARENT ; DEVICES ; EFFICIENCY
AbstractA highly efficient inverted organic light emitting diode using 1.0 nm-thick ZnIx as a hole-blocking layer is developed. We fabricate devices with the configuration ITO/ZnIx (1.0 nm)/Alq(3) (50 nm)/NPB (50 nm)/MoO3 (6.0 nm)/Al (100 nm). The deposition of a ZnIx layer increases the maximum luminance by two orders of magnitude from 13.4 to 3566.1 cd/m(2). In addition, the maximum current efficiency and power efficiency are increased by three orders of magnitude, and the turn-on voltage to reach 1 cd/m(2) decreases from 13 to 8V. The results suggest that the electron injection efficiency is not improved by introducing a ZnIx layer. Instead, the improved device performance originates from the strong hole-blocking ability of ZnIx. This work indicates that layered materials may lead to novel applications in optoelectronic devices. Published by AIP Publishing.
Language英语
WOS IDWOS:000404047400029
Citation statistics
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/152087
Collection中国科学院大连化学物理研究所
Affiliation1.Dalian Univ Technol, Sch Phys, Dalian 116024, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Mol React Dynam, Dalian 116023, Peoples R China
3.Hainan Univ, Mech & Elect Engn Coll, Haikou 570228, Peoples R China
4.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
Recommended Citation
GB/T 7714
Cheng, Chuan-Hui,Zhang, Bi-Long,Sun, Chao,et al. Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer[J]. JOURNAL OF APPLIED PHYSICS,2017,121.
APA Cheng, Chuan-Hui.,Zhang, Bi-Long.,Sun, Chao.,Li, Ruo-Xuan.,Wang, Yuan.,...&Cong, Shu-Lin.(2017).Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer.JOURNAL OF APPLIED PHYSICS,121.
MLA Cheng, Chuan-Hui,et al."Significant performance enhancement of inverted organic light-emitting diodes by using ZnIx as a hole-blocking layer".JOURNAL OF APPLIED PHYSICS 121(2017).
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Cheng, Chuan-Hui]'s Articles
[Zhang, Bi-Long]'s Articles
[Sun, Chao]'s Articles
Baidu academic
Similar articles in Baidu academic
[Cheng, Chuan-Hui]'s Articles
[Zhang, Bi-Long]'s Articles
[Sun, Chao]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Cheng, Chuan-Hui]'s Articles
[Zhang, Bi-Long]'s Articles
[Sun, Chao]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.