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Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots
Liu, Jia1; Liu, Bin1; Zhang, Xisheng1; Guo, Xiaojia1; Liu, Shengzhong (Frank)1,2
关键词Si Quantum Dot Silicon Nitride Thin Film Pecvd Boron-doping Argon Dilution
刊名NANOTECHNOLOGY
2017-07-14
DOI10.1088/1361-6528/aa718d
28
收录类别SCI
文章类型Article
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]CHEMICAL-VAPOR-DEPOSITION ; TANDEM SOLAR-CELLS ; NANOCRYSTALLINE SILICON ; WINDOW LAYER ; PHOTOLUMINESCENCE ; NANOSTRUCTURES ; TEMPERATURE ; PERFORMANCE ; TRANSITION ; ORIGIN
英文摘要Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm(-1)) and carrier concentration (2.41 x 10(19) cm(-3)) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.
语种英语
WOS记录号WOS:000404114800001
引用统计
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/152132
专题中国科学院大连化学物理研究所
作者单位1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State Key Lab Catalysis,IChEM, Dalian 116023, Peoples R China
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GB/T 7714
Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots[J]. NANOTECHNOLOGY,2017,28.
APA Liu, Jia,Liu, Bin,Zhang, Xisheng,Guo, Xiaojia,&Liu, Shengzhong .(2017).Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots.NANOTECHNOLOGY,28.
MLA Liu, Jia,et al."Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots".NANOTECHNOLOGY 28(2017).
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