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题名: Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots
作者: Liu, Jia1;  Liu, Bin1;  Zhang, Xisheng1;  Guo, Xiaojia1;  Liu, Shengzhong (Frank)1, 2
关键词: Si quantum dot ;  silicon nitride thin film ;  PECVD ;  boron-doping ;  argon dilution
刊名: NANOTECHNOLOGY
发表日期: 2017-07-14
DOI: 10.1088/1361-6528/aa718d
卷: 28
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary ;  Physics, Applied
研究领域[WOS]: Science & Technology - Other Topics ;  Materials Science ;  Physics
英文摘要: Boron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm(-1)) and carrier concentration (2.41 x 10(19) cm(-3)) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ;  TANDEM SOLAR-CELLS ;  NANOCRYSTALLINE SILICON ;  WINDOW LAYER ;  PHOTOLUMINESCENCE ;  NANOSTRUCTURES ;  TEMPERATURE ;  PERFORMANCE ;  TRANSITION ;  ORIGIN
语种: 英语
WOS记录号: WOS:000404114800001
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/152132
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State Key Lab Catalysis,IChEM, Dalian 116023, Peoples R China

Recommended Citation:
Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots[J]. NANOTECHNOLOGY,2017,28.
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