DICP OpenIR
Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots
Liu, Jia1; Liu, Bin1; Zhang, Xisheng1; Guo, Xiaojia1; Liu, Shengzhong (Frank)1,2
KeywordSi Quantum Dot Silicon Nitride Thin Film Pecvd Boron-doping Argon Dilution
Source PublicationNANOTECHNOLOGY
2017-07-14
DOI10.1088/1361-6528/aa718d
Volume28
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordCHEMICAL-VAPOR-DEPOSITION ; TANDEM SOLAR-CELLS ; NANOCRYSTALLINE SILICON ; WINDOW LAYER ; PHOTOLUMINESCENCE ; NANOSTRUCTURES ; TEMPERATURE ; PERFORMANCE ; TRANSITION ; ORIGIN
AbstractBoron-doped silicon nitride thin films (SiNx) containing silicon quantum dots (Si QD) were prepared in situ by plasma enhanced chemical vapor deposition. With the aim of optimizing the performance of thin films, the mixed gas including argon and hydrogen was applied as dilution. The effects of Ar flow on the structural, electrical and optical properties of B-doped SiNx thin films were systemically studied through various characterizations. By tuning the Ar flow, the properties, such as QD size, crystallinity and optical band gap, can be effectively controlled. The B-doping efficiency in thin films was proved to be promoted by introducing moderate Ar flow. The maximum values of dark conductivity (1.52 S cm(-1)) and carrier concentration (2.41 x 10(19) cm(-3)) were obtained for the B-doped SiNx thin films at the Ar flow of 200 sccm. Furthermore, the mechanism on the promotion in B-doping was illustrated in detail in this paper.
Language英语
WOS IDWOS:000404114800001
Citation statistics
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/152132
Collection中国科学院大连化学物理研究所
Affiliation1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State Key Lab Catalysis,IChEM, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots[J]. NANOTECHNOLOGY,2017,28.
APA Liu, Jia,Liu, Bin,Zhang, Xisheng,Guo, Xiaojia,&Liu, Shengzhong .(2017).Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots.NANOTECHNOLOGY,28.
MLA Liu, Jia,et al."Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots".NANOTECHNOLOGY 28(2017).
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