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题名: Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots
作者: Zhang, Xisheng1, 2;  Wang, Qian1;  Jin, Zhiwen1;  Zhang, Jingru1;  Liu, Shengzhong Frank1, 3
刊名: NANOSCALE
发表日期: 2017-05-21
DOI: 10.1039/c7nr02010d
卷: 9, 页:6278-6285
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Physical Sciences ;  Technology
类目[WOS]: Chemistry, Multidisciplinary ;  Nanoscience & Nanotechnology ;  Materials Science, Multidisciplinary ;  Physics, Applied
研究领域[WOS]: Chemistry ;  Science & Technology - Other Topics ;  Materials Science ;  Physics
英文摘要: Photodetectors (PDs), especially those that respond in the infrared region, are highly desirable and have a wide range of applications ranging from cell phones, cameras, and home electronics to airplanes and satellites. Herein, we designed and fabricated PDs based on air-stable alpha-CsPbI3 QDs and an up-conversion material (NaYF4:Yb,Er QDs) using a facial low temperature spin-coating method. When the alpha-CsPbI3 QDs are surface-modified using NaYF4:Yb,Er QDs, their optical response is extended to the NIR region to allow broadband application from the UV to visible to NIR region (260 nm-1100 nm). The optoelectronic properties and compositional stability of the devices were also studied in detail. From the results, the PDs are capable of broad-bandwidth photo-detection from the deep UV to NIR region (260 nm-1100 nm) with good photoresponsivity (R, 1.5 A W-1), high on/off ratio (up to 10(4)) and very short rise/decay time (less than 5 ms/5 ms). It was found that the photoresponsivity performance of the PDs in this work is better than that of all the other previously reported perovskite QD-based PDs with a lateral device structure. Furthermore, the device performance shows very little degradation over the course of 60 days of storage under ambient conditions. The combination of remarkable stability, high performance broad-bandwidth photo-detection, and easy fabrication suggest that these QDs are a very promising semiconducting candidate for optoelectronic applications.
关键词[WOS]: LEAD HALIDE PEROVSKITES ;  SOLAR-CELLS ;  HIGH-PERFORMANCE ;  NIR PHOTODETECTOR ;  ANION-EXCHANGE ;  NANOCRYSTALS ;  EFFICIENCY ;  STABILITY ;  NANOPARTICLES ;  CSPBX3
语种: 英语
WOS记录号: WOS:000401649700008
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/152260
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Key Lab Appl Surface & Colloid Chem,Natl Minist E, Shaanxi Key Lab Adv Energy Technol,Sch Mat Sci &, Xian 710119, Peoples R China
2.Yuncheng Univ, Dept Phys & Elect Engn, Yuncheng 044000, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, IChEM, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China

Recommended Citation:
Zhang, Xisheng,Wang, Qian,Jin, Zhiwen,et al. Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots[J]. NANOSCALE,2017,9:6278-6285.
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