DICP OpenIR
Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots
Zhang, Xisheng1,2; Wang, Qian1; Jin, Zhiwen1; Zhang, Jingru1; Liu, Shengzhong Frank1,3
Source PublicationNANOSCALE
2017-05-21
DOI10.1039/c7nr02010d
Volume9Pages:6278-6285
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordLEAD HALIDE PEROVSKITES ; SOLAR-CELLS ; HIGH-PERFORMANCE ; NIR PHOTODETECTOR ; ANION-EXCHANGE ; NANOCRYSTALS ; EFFICIENCY ; STABILITY ; NANOPARTICLES ; CSPBX3
AbstractPhotodetectors (PDs), especially those that respond in the infrared region, are highly desirable and have a wide range of applications ranging from cell phones, cameras, and home electronics to airplanes and satellites. Herein, we designed and fabricated PDs based on air-stable alpha-CsPbI3 QDs and an up-conversion material (NaYF4:Yb,Er QDs) using a facial low temperature spin-coating method. When the alpha-CsPbI3 QDs are surface-modified using NaYF4:Yb,Er QDs, their optical response is extended to the NIR region to allow broadband application from the UV to visible to NIR region (260 nm-1100 nm). The optoelectronic properties and compositional stability of the devices were also studied in detail. From the results, the PDs are capable of broad-bandwidth photo-detection from the deep UV to NIR region (260 nm-1100 nm) with good photoresponsivity (R, 1.5 A W-1), high on/off ratio (up to 10(4)) and very short rise/decay time (less than 5 ms/5 ms). It was found that the photoresponsivity performance of the PDs in this work is better than that of all the other previously reported perovskite QD-based PDs with a lateral device structure. Furthermore, the device performance shows very little degradation over the course of 60 days of storage under ambient conditions. The combination of remarkable stability, high performance broad-bandwidth photo-detection, and easy fabrication suggest that these QDs are a very promising semiconducting candidate for optoelectronic applications.
Language英语
WOS IDWOS:000401649700008
Citation statistics
Cited Times:36[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/152260
Collection中国科学院大连化学物理研究所
Affiliation1.Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Key Lab Appl Surface & Colloid Chem,Natl Minist E, Shaanxi Key Lab Adv Energy Technol,Sch Mat Sci &, Xian 710119, Peoples R China
2.Yuncheng Univ, Dept Phys & Elect Engn, Yuncheng 044000, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, IChEM, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Zhang, Xisheng,Wang, Qian,Jin, Zhiwen,et al. Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots[J]. NANOSCALE,2017,9:6278-6285.
APA Zhang, Xisheng,Wang, Qian,Jin, Zhiwen,Zhang, Jingru,&Liu, Shengzhong Frank.(2017).Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots.NANOSCALE,9,6278-6285.
MLA Zhang, Xisheng,et al."Stable ultra-fast broad-bandwidth photodetectors based on alpha-CsPbI3 perovskite and NaYF4:Yb,Er quantum dots".NANOSCALE 9(2017):6278-6285.
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