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Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature
Liu, Jia1; Liu, Bin1; Zhang, Xisheng1; Guo, Xiaojia1; Liu, Shengzhong (Frank)1,2
KeywordP-si Thin Film Bias Pecvd
Source PublicationTHIN SOLID FILMS
2017-05-01
DOI10.1016/j.tsf.2017.03.050
Volume629Pages:90-96
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectMaterials Science, Multidisciplinary ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS Research AreaMaterials Science ; Physics
WOS KeywordCHEMICAL-VAPOR-DEPOSITION ; SILICON QUANTUM DOTS ; SOLAR-CELLS ; NANOCRYSTALLINE SILICON ; PLASMA ; GROWTH ; PERFORMANCE ; PECVD ; TRANSISTORS ; DENSITY
AbstractPolycrystalline silicon (p-Si) thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) at low substrate temperature (180 degrees C) with high-hydrogen dilution. Negative DC substrate bias is applied during the deposition process for improving the crystallinity of thin films. It is found that there is a phase transition from nanocrystalline phase to polycrystalline phase at negative bias = 50 V, as identified by scanning electron microscopy (SEM). The optimized p-Si thin film with large grains (similar to 480 nm) are obtained at negative bias = 100 V. The deconvoluted Raman spectra reveal that the p-Si thin film is a mixture including amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and p-Si, and the crystalline volume fraction gradually increases with the substrate negative bias in the range of 0-100 V. The impacts of negative bias on the optical and electrical properties of p-Si thin films have been investigated. The growth mechanism of the p-Si grains has been discussed in detail. A grain-merging model is proposed for explaining the effect of negative bias on the formation of large p-Si grains at low temperature. (C) 2017 Elsevier B.V. All rights reserved.
Language英语
WOS IDWOS:000401079700013
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/152316
Collection中国科学院大连化学物理研究所
Affiliation1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State key Lab Catalysis,iChEM, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature[J]. THIN SOLID FILMS,2017,629:90-96.
APA Liu, Jia,Liu, Bin,Zhang, Xisheng,Guo, Xiaojia,&Liu, Shengzhong .(2017).Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature.THIN SOLID FILMS,629,90-96.
MLA Liu, Jia,et al."Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature".THIN SOLID FILMS 629(2017):90-96.
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