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题名: Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature
作者: Liu, Jia1;  Liu, Bin1;  Zhang, Xisheng1;  Guo, Xiaojia1;  Liu, Shengzhong (Frank)1, 2
关键词: p-Si ;  Thin film ;  Bias ;  PECVD
刊名: THIN SOLID FILMS
发表日期: 2017-05-01
DOI: 10.1016/j.tsf.2017.03.050
卷: 629, 页:90-96
收录类别: SCI
文章类型: Article
WOS标题词: Science & Technology ;  Technology ;  Physical Sciences
类目[WOS]: Materials Science, Multidisciplinary ;  Materials Science, Coatings & Films ;  Physics, Applied ;  Physics, Condensed Matter
研究领域[WOS]: Materials Science ;  Physics
英文摘要: Polycrystalline silicon (p-Si) thin films are fabricated by plasma enhanced chemical vapor deposition (PECVD) at low substrate temperature (180 degrees C) with high-hydrogen dilution. Negative DC substrate bias is applied during the deposition process for improving the crystallinity of thin films. It is found that there is a phase transition from nanocrystalline phase to polycrystalline phase at negative bias = 50 V, as identified by scanning electron microscopy (SEM). The optimized p-Si thin film with large grains (similar to 480 nm) are obtained at negative bias = 100 V. The deconvoluted Raman spectra reveal that the p-Si thin film is a mixture including amorphous silicon (a-Si), nanocrystalline silicon (nc-Si) and p-Si, and the crystalline volume fraction gradually increases with the substrate negative bias in the range of 0-100 V. The impacts of negative bias on the optical and electrical properties of p-Si thin films have been investigated. The growth mechanism of the p-Si grains has been discussed in detail. A grain-merging model is proposed for explaining the effect of negative bias on the formation of large p-Si grains at low temperature. (C) 2017 Elsevier B.V. All rights reserved.
关键词[WOS]: CHEMICAL-VAPOR-DEPOSITION ;  SILICON QUANTUM DOTS ;  SOLAR-CELLS ;  NANOCRYSTALLINE SILICON ;  PLASMA ;  GROWTH ;  PERFORMANCE ;  PECVD ;  TRANSISTORS ;  DENSITY
语种: 英语
WOS记录号: WOS:000401079700013
Citation statistics: 
内容类型: 期刊论文
URI标识: http://cas-ir.dicp.ac.cn/handle/321008/152316
Appears in Collections:中国科学院大连化学物理研究所_期刊论文

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作者单位: 1.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
2.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, State key Lab Catalysis,iChEM, Dalian 116023, Peoples R China

Recommended Citation:
Liu, Jia,Liu, Bin,Zhang, Xisheng,et al. Improvement of crystallinity for poly-Si thin film by negative substrate bias at low temperature[J]. THIN SOLID FILMS,2017,629:90-96.
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