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Computational understanding of the structural and electronic properties of the GeS-graphene contact
Chen, Hong1; Zhao, Jinfeng2; Huang, Jindou3; Liang, Yan1
Corresponding AuthorZhao, Jinfeng(jfzhao@dicp.ac.cn) ; Huang, Jindou(jindouhuang@dicp.ac.cn)
Source PublicationPHYSICAL CHEMISTRY CHEMICAL PHYSICS
2019-04-14
ISSN1463-9076
DOI10.1039/c9cp00374f
Volume21Issue:14Pages:7447-7453
Funding ProjectNational Natural Science foundation of China[11604333]
Funding OrganizationNational Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China
WOS SubjectChemistry, Physical ; Physics, Atomic, Molecular & Chemical
WOS Research AreaChemistry ; Physics
WOS KeywordBLACK PHOSPHORUS ; MONOLAYER ; FIELD ; MOS2 ; SEMICONDUCTOR ; SCHOTTKY ; HETEROSTRUCTURES ; STRAIN
AbstractTwo-dimensional (2D) metal-semiconductor junctions have shown significant potential for nanoelectronic and optoelectronic applications. Herein, the structural and electronic properties of a germanium monosulfide/graphene (GeS/G) van der Waals (vdW) heterostructure were explored using first-principles calculations. It was discovered that the structural rigidity and mechanical anisotropy of GeS could be significantly improved by loading graphene. In addition, the intrinsic characteristics of the atomic layer GeS and graphene were well preserved, and the formation of a p-type Schottky contact in the equilibrium state was demonstrated; moreover, the Schottky barrier height of the interface was sensitive to the external condition and could be reduced to zero via applying normal strain or a perpendicular electric field. These insightful results pave the way for experimental research and the design of other 2D nanomaterial-based electronic and optoelectronic devices.
Language英语
Funding OrganizationNational Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China ; National Natural Science foundation of China
WOS IDWOS:000464580600019
PublisherROYAL SOC CHEMISTRY
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Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/165553
Collection中国科学院大连化学物理研究所
Corresponding AuthorZhao, Jinfeng; Huang, Jindou
Affiliation1.Shandong Univ, Sch Chem & Chem Engn, Sch Phys, Shandanan Str 27, Jinan 250100, Shandong, Peoples R China
2.Chinese Acad Sci, State Key Lab Mol React Dynam, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
3.Dalian Nationalities Univ, Sch Phys & Mat Engn, Dalian 116600, Peoples R China
Recommended Citation
GB/T 7714
Chen, Hong,Zhao, Jinfeng,Huang, Jindou,et al. Computational understanding of the structural and electronic properties of the GeS-graphene contact[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2019,21(14):7447-7453.
APA Chen, Hong,Zhao, Jinfeng,Huang, Jindou,&Liang, Yan.(2019).Computational understanding of the structural and electronic properties of the GeS-graphene contact.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,21(14),7447-7453.
MLA Chen, Hong,et al."Computational understanding of the structural and electronic properties of the GeS-graphene contact".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 21.14(2019):7447-7453.
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