DICP OpenIR
Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems
Chen, Xin1; Yang, He1; Wu, Bin1; Wang, Lifeng1; Fu, Qiang2; Liu, Yunqi1
Corresponding AuthorWu, Bin(wubin@iccas.ac.cn) ; Liu, Yunqi(liuyq@iccas.ac.cn)
Keyworddimensionality epitaxy graphene-hexagonal boron nitride growth
Source PublicationADVANCED MATERIALS
2019-03-22
ISSN0935-9648
DOI10.1002/adma.201805582
Volume31Issue:12Pages:9
Funding ProjectNational Basic Research Program of China[2016YFA0200101] ; National Natural Science Foundation of China[21633012] ; National Natural Science Foundation of China[60911130231] ; National Natural Science Foundation of China[51233006] ; National Natural Science Foundation of China[61390500] ; Beijing Municipal Science & Technology Commission[Z161100002116025] ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB12030100]
Funding OrganizationNational Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
WOS SubjectChemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordHEXAGONAL BORON-NITRIDE ; VAPOR-DEPOSITION GROWTH ; INPLANE HETEROSTRUCTURES ; GRAIN-BOUNDARIES ; MONOLAYER ; INTERFACE ; DOMAINS ; COPPER ; FLAKES ; FILMS
AbstractEpitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. Beyond this, it is not clear whether the growth of 2D materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. Here a library of hexagonal boron nitride epitaxy is presented on graphene-hexagonal boron nitride templates of various dimensionalities, including 2D homo/heteromaterial surface and 1D interfaces of homo/heteromaterials. A framework that allows the description of various kinetic growth by combined geometric and structural modeling is developed. Using these tools, the underlying mechanisms for the complex merging process, grain boundary formation, edge-configuration-dependent growth difference, position-dependent size difference, and the correlation among epilayer orientation, crystal structure and geometry are elucidated. This work provides a general viewpoint for understanding epitaxial growth in complex systems.
Language英语
Funding OrganizationNational Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Basic Research Program of China ; National Basic Research Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Beijing Municipal Science & Technology Commission ; Beijing Municipal Science & Technology Commission ; Chinese Academy of Sciences ; Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
WOS IDWOS:000462619000001
PublisherWILEY-V C H VERLAG GMBH
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/165737
Collection中国科学院大连化学物理研究所
Corresponding AuthorWu, Bin; Liu, Yunqi
Affiliation1.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
2.Chinese Acad Sci, State Key Lab Catalysis, Collaborat Innovat Ctr Chem Energy Mat iChEM, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Chen, Xin,Yang, He,Wu, Bin,et al. Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems[J]. ADVANCED MATERIALS,2019,31(12):9.
APA Chen, Xin,Yang, He,Wu, Bin,Wang, Lifeng,Fu, Qiang,&Liu, Yunqi.(2019).Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems.ADVANCED MATERIALS,31(12),9.
MLA Chen, Xin,et al."Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems".ADVANCED MATERIALS 31.12(2019):9.
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