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Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells
Qian, Chong-Xin1; Deng, Zun-Yi1; Yang, Kang1; Feng, Jiangshan2; Wang, Ming-Zi1; Yang, Zhou2; Liu, Shengzhong (Frank)2,3; Feng, Hong-Jian1
Source PublicationAPPLIED PHYSICS LETTERS
2018-02-26
ISSN0003-6951
DOI10.1063/1.5019608
Volume112Issue:9
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences
WOS SubjectPhysics, Applied
WOS Research AreaPhysics
WOS KeywordHALIDE PEROVSKITES ; CHARGE EXTRACTION ; THIN-FILM ; STABILITY ; PERFORMANCE ; BR ; HETEROJUNCTION ; NANOWIRES ; LAYERS ; SEMICONDUCTOR
AbstractInterface engineering has become a vital method in accelerating the development of perovskite solar cells in the past few years. To investigate the effect of different contacted surfaces of a light absorber with an electron transporting layer, TiO2, we synthesize CsPbBr3/TiO2 thin films with two different interfaces (CsBr/TiO2 and PbBr2/TiO2). Both interfacial heterostructures exhibit enhanced visible light absorption, and the CsBr/TiO2 thin film presents higher absorption than the PbBr2/TiO2 interface, which is attributed to the formation of interface states and the decreased interface bandgap. Furthermore, compared with the PbBr2/TiO2 interface, CsBr/TiO2 solar devices present larger output short circuit current and shorter photoluminescence decay time, which indicates that the CsBr contacting layer with TiO2 can better extract and separate the photo-induced carriers. The first-principles calculations confirm that, due to the existence of staggered gap (type II) offset junction and the interface states, the CsBr/TiO2 interface can more effectively separate the photo-induced carriers and thus drive the electron transfer from the CsPbBr3 perovskite layer to the TiO2 layer. These results may be beneficial to exploit the potential application of all-inorganic perovskite CsPbBr3-based solar cells through the interface engineering route. Published by AIP Publishing.
Language英语
WOS IDWOS:000427022500047
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/168929
Collection中国科学院大连化学物理研究所
Corresponding AuthorFeng, Hong-Jian
Affiliation1.Northwest Univ Xian, Sch Phys, Xian 710069, Shaanxi, Peoples R China
2.Shaanxi Normal Univ, Xian 710119, Shaanxi, Peoples R China
3.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Qian, Chong-Xin,Deng, Zun-Yi,Yang, Kang,et al. Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells[J]. APPLIED PHYSICS LETTERS,2018,112(9).
APA Qian, Chong-Xin.,Deng, Zun-Yi.,Yang, Kang.,Feng, Jiangshan.,Wang, Ming-Zi.,...&Feng, Hong-Jian.(2018).Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells.APPLIED PHYSICS LETTERS,112(9).
MLA Qian, Chong-Xin,et al."Interface engineering of CsPbBr3/TiO2 heterostructure with enhanced optoelectronic properties for all-inorganic perovskite solar cells".APPLIED PHYSICS LETTERS 112.9(2018).
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