DICP OpenIR
Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing
Wang, Xinglu1; Qin, Xiaoye2; Wang, Wen1; Liu, Yue1; Shi, Xiaoran1; Sun, Yong1; Liu, Chen3; Zhao, Jiali3; Zhang, Guanhua4; Liu, Hui1; Cho, Kyeongjae1,2; Wu, Rui3; Wang, Jiaou3; Zhang, Sen5; Wallace, Robert M.2; Dong, Hong1
KeywordElemental Diffusion Surface Morphology High-k Dielectrics Inas Thermal Stability
Source PublicationAPPLIED SURFACE SCIENCE
2018-06-15
ISSN0169-4332
DOI10.1016/j.apsusc.2018.03.009
Volume443Pages:567-574
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
WOS Research AreaChemistry ; Materials Science ; Physics
WOS KeywordATOMIC-LAYER-DEPOSITION ; SYNCHROTRON-RADIATION PHOTOEMISSION ; V COMPOUND SEMICONDUCTORS ; PASSIVATION ; ENERGY ; FILMS ; SCATTERING ; MOBILITY
AbstractA systematic study of the interfacial chemistry for the HCl pretreated and native oxide InAs(100) samples upon atomic layer deposition (ALD) of Al2O3, and the post deposition annealing (PDA) process has been carried out, using in situ synchrotron radiation photoelectron spectroscopy. The "clean up" effect for the native oxide sample is detected, but it is not observed for the HCl pretreated sample. The out-diffusion and desorption of both In and As oxides have been characterized during the ALD process and the following PDA process. The surface morphology evolution during the PDA process is studied by in situ photo-emission electron microscopy. The bubbles emerged after PDA at 360 degrees C and grew up at 370 degrees C. After PDA at 400 degrees C and at higher temperatures, pits are seen in some areas, and the tear up of the Al2O3 film is seen in other areas with the formation of indium droplets. This study gives insight in the mechanism of elemental diffusion/desorption, which may associate the reliability of III-V semiconductor based devices. (C) 2018 Elsevier B.V. All rights reserved.
Language英语
WOS IDWOS:000428446300068
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/169035
Collection中国科学院大连化学物理研究所
Corresponding AuthorDong, Hong
Affiliation1.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300071, Peoples R China
2.Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
3.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China
4.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
5.Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
Recommended Citation
GB/T 7714
Wang, Xinglu,Qin, Xiaoye,Wang, Wen,et al. Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing[J]. APPLIED SURFACE SCIENCE,2018,443:567-574.
APA Wang, Xinglu.,Qin, Xiaoye.,Wang, Wen.,Liu, Yue.,Shi, Xiaoran.,...&Dong, Hong.(2018).Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing.APPLIED SURFACE SCIENCE,443,567-574.
MLA Wang, Xinglu,et al."Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing".APPLIED SURFACE SCIENCE 443(2018):567-574.
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