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Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate
Fan, Haibo1,2; Wang, Mingzi2; Yang, Zhou1; Ren, Xianpei1; Yin, Mingli1,3; Liu, Shengzhong1,4
Source PublicationAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
2016-11-01
ISSN0947-8396
DOI10.1007/s00339-016-0415-y
Volume122Issue:11
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS Research AreaMaterials Science ; Physics
WOS KeywordPHOTOCATALYTIC ACTIVITY ; TITANIUM-OXIDES ; THIN-FILMS ; TIO2 ; TRANSITION ; TEMPERATURE ; CONVERSION ; CRYSTALS ; ANATASE ; RUTILE
AbstractEpitaxial film of Ti2O3 with high crystalline quality was grown on Al2O3 substrate by pulsed laser deposition process using a powder-pressed TiO2 target in active O-2 flow. X-ray diffraction clearly reveals the (0006) crystalline Ti2O3 orientation and its (10 (0) over bar0)(Ti2O3) parallel to(10 (1) over bar0)(sapphire) in-plane epitaxial relationship with the substrate. Scanning electron microscopy images show that the film grew uniformly on the substrate with a Volmer-Weber mode. High-resolution transmission electron microscopy and selected area electron diffraction further confirm the high crystalline quality of the film. Transmittance spectrum shows that the Ti2O3 film is highly transparent in 400-800 nm with the optical band gap estimated to be 3.53 eV by Tauc plot. The temperature-dependent Hall effect measurement indicates that the Ti2O3 film appears to be n-type semiconductor with carrier concentration, mobility, and resistivity showing typical temperature-dependent behavior. The donor ionization energy was estimated to be 83.6 meV by linear relationship of conductivity versus temperature.
Language英语
WOS IDWOS:000387126600029
PublisherSPRINGER
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/169831
Collection中国科学院大连化学物理研究所
Corresponding AuthorFan, Haibo; Liu, Shengzhong
Affiliation1.Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Shaanxi Engn Lab Adv Energy Technol, Natl Minist Educ,Sch Mat Sci & Engn, Xian 710119, Peoples R China
2.Northwest Univ, Sch Phys, Xian 710069, Peoples R China
3.Xian Technol Univ, Sch Sci, Xian 710062, Shaanxi, Peoples R China
4.Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Fan, Haibo,Wang, Mingzi,Yang, Zhou,et al. Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2016,122(11).
APA Fan, Haibo,Wang, Mingzi,Yang, Zhou,Ren, Xianpei,Yin, Mingli,&Liu, Shengzhong.(2016).Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,122(11).
MLA Fan, Haibo,et al."Optical and electrical properties of high-quality Ti2O3 epitaxial film grown on sapphire substrate".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 122.11(2016).
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