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p-Type CaFe2O4 semiconductor nanorods controllably synthesized by molten salt method
Liu, Xin1; Jiang, Junzhe1; Jia, Yushuai1; Jin, Ailing1; Chen, Xiangshu1; Zhang, Fei1; Han, Hongxian2
KeywordP-type Semiconductor Cafe2o4 Nanorods Molten Salt Crystal Plane Visible-light Absorption
Source PublicationJOURNAL OF ENERGY CHEMISTRY
2016-05-01
ISSN2095-4956
DOI10.1016/j.jechem.2016.03.019
Volume25Issue:3Pages:381-386
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Applied ; Chemistry, Physical ; Energy & Fuels ; Engineering, Chemical
WOS Research AreaChemistry ; Energy & Fuels ; Engineering
WOS KeywordVISIBLE-LIGHT IRRADIATION ; SENSITIZED SOLAR-CELLS ; LI-ION BATTERIES ; HYDROGEN-PRODUCTION ; CALCIUM FERRITE ; N-JUNCTION ; PHOTOCATALYTIC ACTIVITY ; SNO2 NANORODS ; TIO2 NANORODS ; NANOSTRUCTURES
AbstractPure phase, regular shape and well crystallized nanorods of p-type semiconductor CaFe2O4 have been fabricated for the first time by a facile molten salt assisted method, as confirmed by XRD, TEM, SEM and HRTEM. UV-vis diffuse reflectance spectra and Mott-Schottky plots show that the band structure of the CaFe2O4 nanorods is narrower than that of the CaFe2O4 nanoparticles synthesized by conventional method. The enhancement of the visible-light absorption is due to narrowness of the band gap in CaFe2O4 nanorods. The appropriate ratio between the molten salt and the CaFe2O4 precursors plays an important role in inhibiting the growth of the crystals along the (201) plane to give the desired nanorod morphology. This work not only demonstrates that highly pure p-type CaFe2O4 semiconductor with tunable band structure and morphology could be obtained using the molten salt strategy, but also affirms that the bandgap of a semiconductor may be tunable by monitoring the growth of a particular crystal plane. Furthermore, the facile eutectic molten salt method developed in this work may be further extended to fabricate some other semiconductor nanomaterials with a diversity of morphologies. (C) 2016 Science Press and Dalian Institute of Chemical Physics. All rights reserved.
Language英语
WOS IDWOS:000380077000007
PublisherELSEVIER SCIENCE BV
Citation statistics
Cited Times:23[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/170325
Collection中国科学院大连化学物理研究所
Corresponding AuthorChen, Xiangshu; Han, Hongxian
Affiliation1.Jiangxi Normal Uniiiers, Coll Chem & Chem Engn, Jiangxi Inorgan Membrane Mat Engn Res Ctr, Nanchang 330022, Jiangxi, Peoples R China
2.Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Liaoning, Peoples R China
Recommended Citation
GB/T 7714
Liu, Xin,Jiang, Junzhe,Jia, Yushuai,et al. p-Type CaFe2O4 semiconductor nanorods controllably synthesized by molten salt method[J]. JOURNAL OF ENERGY CHEMISTRY,2016,25(3):381-386.
APA Liu, Xin.,Jiang, Junzhe.,Jia, Yushuai.,Jin, Ailing.,Chen, Xiangshu.,...&Han, Hongxian.(2016).p-Type CaFe2O4 semiconductor nanorods controllably synthesized by molten salt method.JOURNAL OF ENERGY CHEMISTRY,25(3),381-386.
MLA Liu, Xin,et al."p-Type CaFe2O4 semiconductor nanorods controllably synthesized by molten salt method".JOURNAL OF ENERGY CHEMISTRY 25.3(2016):381-386.
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