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Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application
Zhao, Wangen1,2,3; Pan, Daocheng3; Liu, Shengzhong (Frank)1,2,4
Source PublicationNANOSCALE
2016
ISSN2040-3364
DOI10.1039/c6nr00959j
Volume8Issue:19Pages:10160-10165
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Physical Sciences ; Technology
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordCU2ZNSN(S,SE)(4) SOLAR-CELLS ; NANOCRYSTALS ; FABRICATION ; EFFICIENCY ; PRECURSOR ; DEVICE ; ROUTE ; INKS
AbstractCu2ZnSn(S,Se)(4) (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)(4) thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm(2) without an anti-reflection layer.
Language英语
WOS IDWOS:000376047200029
PublisherROYAL SOC CHEMISTRY
Citation statistics
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/170965
Collection中国科学院大连化学物理研究所
Corresponding AuthorPan, Daocheng; Liu, Shengzhong (Frank)
Affiliation1.Shaanxi Normal Univ, Key Lab Appl Surface & Colloid Chem, Natl Minist Educ, Sch Mat Sci & Engn, Xian 710062, Peoples R China
2.Shaanxi Normal Univ, Sch Mat Sci & Engn, Shaanxi Engn Lab Adv Energy Technol, Xian 710062, Peoples R China
3.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Rare Earth Resource Utilizat, 5625 Renmin St, Changchun 130022, Jilin, Peoples R China
4.Chinese Acad Sci, Dalian Natl Lab Clean Energy, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Zhao, Wangen,Pan, Daocheng,Liu, Shengzhong . Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application[J]. NANOSCALE,2016,8(19):10160-10165.
APA Zhao, Wangen,Pan, Daocheng,&Liu, Shengzhong .(2016).Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application.NANOSCALE,8(19),10160-10165.
MLA Zhao, Wangen,et al."Kesterite Cu2Zn(Sn,Ge)(S,Se)(4) thin film with controlled Ge-doping for photovoltaic application".NANOSCALE 8.19(2016):10160-10165.
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