DICP OpenIR
Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing
Fan, Haibo1,2,3,4; Yang, Zhou1,2,3; Ren, Xianpei1,2,3; Yin, Mingli1,2,3,5; Gao, Fei1,2,3; Liu, Shengzhong (Frank)1,2,3,6
Source PublicationAIP ADVANCES
2016
ISSN2158-3226
DOI10.1063/1.4941040
Volume6Issue:1
Indexed BySCI
SubtypeArticle
WOS HeadingsScience & Technology ; Technology ; Physical Sciences
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS KeywordSENSITIZED SOLAR-CELLS ; TIN OXIDE-FILMS ; ORGANOMETAL HALIDE PEROVSKITES ; LIGHT-EMITTING-DIODES ; ELECTRICAL-PROPERTIES ; OPTICAL-PROPERTIES ; LASER-DIODES ; HETEROJUNCTION ; PERFORMANCE ; DEPOSITION
AbstractThe energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Language英语
WOS IDWOS:000369442200072
PublisherAMER INST PHYSICS
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/171371
Collection中国科学院大连化学物理研究所
Corresponding AuthorFan, Haibo; Liu, Shengzhong (Frank)
Affiliation1.Shaanxi Normal Univ, Natl Minist Educ, Key Lab Appl Surface & Colloid Chem, Xian 710119, Peoples R China
2.Shaanxi Normal Univ, Shaanxi Engn Lab Adv Energy Technol, Xian 710119, Peoples R China
3.Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Peoples R China
4.NW Univ Xian, Sch Phys, Xian 710069, Peoples R China
5.Xian Technol Univ, Sch Sci, Xian 710062, Shaanxi, Peoples R China
6.Chinese Acad Sci, Dalian Inst Chem Phys, Dalian Natl Lab Clean Energy, Dalian 116023, Peoples R China
Recommended Citation
GB/T 7714
Fan, Haibo,Yang, Zhou,Ren, Xianpei,et al. Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing[J]. AIP ADVANCES,2016,6(1).
APA Fan, Haibo,Yang, Zhou,Ren, Xianpei,Yin, Mingli,Gao, Fei,&Liu, Shengzhong .(2016).Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing.AIP ADVANCES,6(1).
MLA Fan, Haibo,et al."Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing".AIP ADVANCES 6.1(2016).
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