DICP OpenIR
Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces
Wei, Wei1,2,3; Lin, Le1,4; Zhang, Guanhua1; Ye, Xiaoqiu5; Bin, Ren5; Meng, Caixia1; Ning, Yanxiao1; Fu, Qiang1; Bao, Xinhe1,2
Corresponding AuthorFu, Qiang(qfu@dicp.ac.cn)
Keywordepitaxial growth hexagonal boron nitride (h-BN) LEEM near-surface doping PEEM
Source PublicationADVANCED MATERIALS INTERFACES
2019-05-23
ISSN2196-7350
DOI10.1002/admi.201801906
Volume6Issue:10Pages:9
Funding ProjectNational Natural Science Foundation of China[21688102] ; National Natural Science Foundation of China[21825203] ; National Natural Science Foundation of China[21573224] ; National Natural Science Foundation of China[91545204] ; Ministry of Science and Technology of China[2016YFA0200200] ; Ministry of Science and Technology of China[2017YFB0602205] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB17020000]
Funding OrganizationNational Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
WOS SubjectChemistry, Multidisciplinary ; Materials Science, Multidisciplinary
WOS Research AreaChemistry ; Materials Science
WOS KeywordHEXAGONAL BORON-NITRIDE ; SUBSURFACE CARBON ; GRAPHENE ; MONOLAYER ; CATALYST ; CO ; OVERLAYERS ; ADSORPTION ; OXIDATION ; HYDROGEN
AbstractEpitaxial growth of ultrathin overlayers on solid substrate is critically dependent on the surface structure, and in this work near-surface doping is identified as another important growth factor. It is shown that growth of hexagonal boron nitride (h-BN) on Ni(111) through chemical vapor deposition or surface ammonization can be strongly modulated by near-surface B doping. Epitaxial h-BN islands form on clean Ni(111) surface, while both epitaxial and nonepitaxial h-BN islands grow on Ni(111) containing near-surface B atoms. Quantitative correlation of epitaxial growth and near-surface doping is unambiguously demonstrated. In situ spatially resolved surface science measurements based on photoemission electron microscopy and low energy electron microscopy in combination with density function calculations reveal that near-surface B atoms weaken the interaction between h-BN overlayer and Ni surface, which favor the nonepitaxial and metastable h-BN structures. The present work suggests that near-surface doping acts as an effective route to influence epitaxial growth of two-dimensional (2D) material overlayers on solids.
Language英语
Funding OrganizationNational Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Ministry of Science and Technology of China ; Ministry of Science and Technology of China ; Strategic Priority Research Program of the Chinese Academy of Sciences ; Strategic Priority Research Program of the Chinese Academy of Sciences
WOS IDWOS:000468810200010
PublisherWILEY
Citation statistics
Document Type期刊论文
Identifierhttp://cas-ir.dicp.ac.cn/handle/321008/172170
Collection中国科学院大连化学物理研究所
Corresponding AuthorFu, Qiang
Affiliation1.Chinese Acad Sci, State Key Lab Catalysis, iChEM, Dalian Inst Chem Phys, Dalian 116023, Peoples R China
2.Univ Sci & Technol China, Dept Chem Phys, Hefei 230026, Anhui, Peoples R China
3.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
4.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
5.China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China
Recommended Citation
GB/T 7714
Wei, Wei,Lin, Le,Zhang, Guanhua,et al. Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces[J]. ADVANCED MATERIALS INTERFACES,2019,6(10):9.
APA Wei, Wei.,Lin, Le.,Zhang, Guanhua.,Ye, Xiaoqiu.,Bin, Ren.,...&Bao, Xinhe.(2019).Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces.ADVANCED MATERIALS INTERFACES,6(10),9.
MLA Wei, Wei,et al."Effect of Near-Surface Dopants on the Epitaxial Growth of h-BN on Metal Surfaces".ADVANCED MATERIALS INTERFACES 6.10(2019):9.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Wei, Wei]'s Articles
[Lin, Le]'s Articles
[Zhang, Guanhua]'s Articles
Baidu academic
Similar articles in Baidu academic
[Wei, Wei]'s Articles
[Lin, Le]'s Articles
[Zhang, Guanhua]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wei, Wei]'s Articles
[Lin, Le]'s Articles
[Zhang, Guanhua]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.