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Structure and impedance of ZrO2 doped with SC2O3 and CeO2
Wang, ZW; Cheng, MJ; Bi, ZH; Dong, YL; Zhang, HM; Zhang, J; Feng, ZC; Li, C; Cheng MJ(程谟杰); Cheng MJ(程谟杰)
关键词Doped Zro2 Ac Impedance Raman Spectra Grain Boundary
刊名MATERIALS LETTERS
2005-08-01
DOI10.1016/j.matlet.2004.07.065
59期:19-20页:2579-2582
收录类别SCI
文章类型Article
部门归属3,5
项目归属302,303,503
产权排名1;1
WOS标题词Science & Technology ; Technology ; Physical Sciences
类目[WOS]Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]Materials Science ; Physics
关键词[WOS]SCANDIA-STABILIZED ZIRCONIA ; ELECTRICAL-CONDUCTIVITY ; HYDROTHERMAL METHOD
英文摘要Scandia and ceria doped zirconia samples, with 10 mol% SC2O3 and different content of CeO2, were synthesized and characterized. The XRD results depict that the sintered samples have a cubic phase structure. However, Raman spectra show that besides the main cubic phase, a secondary phase is also present in the sintered samples. The addition of CeO2 can raise the content of the cubic phase, but the minor metastable tetragonal phase (t'-phase) exists even at the CeO2 content as high as 10 mol%. The near-UV Raman spectra indicate that the deformed tetragonal structure predominates at the grain boundary. The addition of CeO2 can reduce the impurity at grain boundary, and no impurity can be found by near-UV Raman spectroscopy at the grain boundary of the samples with high CeO2 content. The impedance measurements show that with the increase of CeO2 content, the impedance of grain boundary decreases and the bulk impedance increases. The low impedance of grain boundary can be attributed to the formation of a clean grain boundary upon CeO2 doping, and the increase of the bulk impedance is due to the blocking effect of the large Ce(IV) ions. (c) 2005 Elsevier B.V All rights reserved.
语种英语
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WOS记录号WOS:000230275100045
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被引频次:66[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://cas-ir.dicp.ac.cn/handle/321008/93279
专题中国科学院大连化学物理研究所
通讯作者Cheng MJ(程谟杰); Cheng MJ(程谟杰)
作者单位Chinese Acad Sci, Dalian Inst Chem Phys, State Key Lab Catalysis, Dalian 116023, Peoples R China
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GB/T 7714
Wang, ZW,Cheng, MJ,Bi, ZH,et al. Structure and impedance of ZrO2 doped with SC2O3 and CeO2[J]. MATERIALS LETTERS,2005,59(19-20):2579-2582.
APA Wang, ZW.,Cheng, MJ.,Bi, ZH.,Dong, YL.,Zhang, HM.,...&程谟杰.(2005).Structure and impedance of ZrO2 doped with SC2O3 and CeO2.MATERIALS LETTERS,59(19-20),2579-2582.
MLA Wang, ZW,et al."Structure and impedance of ZrO2 doped with SC2O3 and CeO2".MATERIALS LETTERS 59.19-20(2005):2579-2582.
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