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Characterization of tunnel oxide passivated contact with n-type poly-Si on p-type c-Si wafer substrate 期刊论文
CURRENT APPLIED PHYSICS, 2019, 卷号: 19, 期号: 7, 页码: 811-816
Authors:  Guo, Xueqi;  Zeng, Yuheng;  Zhang, Zhi;  Huang, Yuqing;  Liao, Mingdun;  Yang, Qing;  Wang, Zhixue;  Du, Minyong;  Guan, Denggao;  Yan, Baojie;  Ye, Jichun
Favorite  |  View/Download:4/0  |  Submit date:2019/06/25
Solar cell  C-V measurement  Built-in potential  poly-Si  TOPCon  p-n junction